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WPM3020-3

Public Made by Adom

by adom

WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WPM3020-3

WILLSEMI Will Semicon · MOSFETs · SOT-23

WPM3020-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±12 V (absolute maximum).
2 S passive Source of the P-channel MOSFET; the body diode forward voltage is VSD -0.8 to -1.5 V at VGS = 0 V and IS = -1 A.
3 D passive Drain of the P-channel MOSFET; rated VDS -30 V, continuous drain current -3.8 A at TA = 25°C (10 s), and pulsed drain current IDM -15 A.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 2
Gate-Source Voltage VGS -12 12 V 2
Continuous Drain Current (a) ID -3.8 A TA=25°C, t≤10 s, surface mounted FR4 1 in² pad 2
Continuous Drain Current (a) ID -3.2 A TA=25°C, steady state, surface mounted FR4 1 in² pad 2
Continuous Drain Current (a) ID -3 A TA=70°C, t≤10 s, surface mounted FR4 1 in² pad 2
Continuous Drain Current (a) ID -2.5 A TA=70°C, steady state, surface mounted FR4 1 in² pad 2
Maximum Power Dissipation (a) PD 1.2 W TA=25°C, t≤10 s, surface mounted FR4 1 in² pad 2
Maximum Power Dissipation (a) PD 0.9 W TA=25°C, steady state, surface mounted FR4 1 in² pad 2
Maximum Power Dissipation (a) PD 0.8 W TA=70°C, t≤10 s, surface mounted FR4 1 in² pad 2
Maximum Power Dissipation (a) PD 0.5 W TA=70°C, steady state, surface mounted FR4 1 in² pad 2
Continuous Drain Current (b) ID -3 A TA=25°C, t≤10 s, surface mounted FR4 minimum pad 2
Continuous Drain Current (b) ID -2.8 A TA=25°C, steady state, surface mounted FR4 minimum pad 2
Continuous Drain Current (b) ID -2.4 A TA=70°C, t≤10 s, surface mounted FR4 minimum pad 2
Continuous Drain Current (b) ID -2.2 A TA=70°C, steady state, surface mounted FR4 minimum pad 2
Maximum Power Dissipation (b) PD 0.8 W TA=25°C, t≤10 s, surface mounted FR4 minimum pad 2
Maximum Power Dissipation (b) PD 0.7 W TA=25°C, steady state, surface mounted FR4 minimum pad 2
Maximum Power Dissipation (b) PD 0.5 W TA=70°C, t≤10 s, surface mounted FR4 minimum pad 2
Maximum Power Dissipation (b) PD 0.4 W TA=70°C, steady state, surface mounted FR4 minimum pad 2
Pulsed Drain Current IDM -15 A Repetitive, tp=10µs, Duty Cycle=1% 2
Operating Junction Temperature TJ -55 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (a) RθJA 84 102 °C/W t≤10 s, surface mounted FR4 1 in² pad 2
Junction-to-Ambient Thermal Resistance (a) RθJA 120 145 °C/W Steady state, surface mounted FR4 1 in² pad 2
Junction-to-Ambient Thermal Resistance (b) RθJA 130 160 °C/W t≤10 s, surface mounted FR4 minimum pad 2
Junction-to-Ambient Thermal Resistance (b) RθJA 145 190 °C/W Steady state, surface mounted FR4 minimum pad 2
Junction-to-Case Thermal Resistance RθJC 60 75 °C/W Steady state 2
Drain-to-Source Breakdown Voltage BVDSS -30 V VGS = 0 V, ID = -250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS = -24V, VGS = 0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±12V 3
Gate Threshold Voltage VGS(TH) -0.5 -1 -1.5 V VGS = VDS, ID = -250uA 3
Drain-to-source On-resistance RDS(on) 43 57 mΩ VGS = -10V, ID = -3.8A 3
Drain-to-source On-resistance RDS(on) 48 71 mΩ VGS = -4.5V, ID = -2.5A 3
Drain-to-source On-resistance RDS(on) 65 115 mΩ VGS = -2.5V, ID = -2.0A 3
Forward Transconductance gFS 6 16 S VDS = -5 V, ID = -3.8A 3
Forward Voltage VSD -0.8 -1.5 V VGS = 0 V, IS = -1A 3

CAD (KiCad official)

  • Symbol: WPM3020-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wpm3020-3-etched.step / wpm3020-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wpm3020-3.step / wpm3020-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (9 pp, sha256 f0a5438c34b57e67, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF