component
WPM3020-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM3020-3
WILLSEMI Will Semicon · MOSFETs · SOT-23
WPM3020-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±12 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward voltage is VSD -0.8 to -1.5 V at VGS = 0 V and IS = -1 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; rated VDS -30 V, continuous drain current -3.8 A at TA = 25°C (10 s), and pulsed drain current IDM -15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (a) | ID | -3.8 | A | TA=25°C, t≤10 s, surface mounted FR4 1 in² pad | 2 | ||
| Continuous Drain Current (a) | ID | -3.2 | A | TA=25°C, steady state, surface mounted FR4 1 in² pad | 2 | ||
| Continuous Drain Current (a) | ID | -3 | A | TA=70°C, t≤10 s, surface mounted FR4 1 in² pad | 2 | ||
| Continuous Drain Current (a) | ID | -2.5 | A | TA=70°C, steady state, surface mounted FR4 1 in² pad | 2 | ||
| Maximum Power Dissipation (a) | PD | 1.2 | W | TA=25°C, t≤10 s, surface mounted FR4 1 in² pad | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.9 | W | TA=25°C, steady state, surface mounted FR4 1 in² pad | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.8 | W | TA=70°C, t≤10 s, surface mounted FR4 1 in² pad | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.5 | W | TA=70°C, steady state, surface mounted FR4 1 in² pad | 2 | ||
| Continuous Drain Current (b) | ID | -3 | A | TA=25°C, t≤10 s, surface mounted FR4 minimum pad | 2 | ||
| Continuous Drain Current (b) | ID | -2.8 | A | TA=25°C, steady state, surface mounted FR4 minimum pad | 2 | ||
| Continuous Drain Current (b) | ID | -2.4 | A | TA=70°C, t≤10 s, surface mounted FR4 minimum pad | 2 | ||
| Continuous Drain Current (b) | ID | -2.2 | A | TA=70°C, steady state, surface mounted FR4 minimum pad | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.8 | W | TA=25°C, t≤10 s, surface mounted FR4 minimum pad | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.7 | W | TA=25°C, steady state, surface mounted FR4 minimum pad | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.5 | W | TA=70°C, t≤10 s, surface mounted FR4 minimum pad | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.4 | W | TA=70°C, steady state, surface mounted FR4 minimum pad | 2 | ||
| Pulsed Drain Current | IDM | -15 | A | Repetitive, tp=10µs, Duty Cycle=1% | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 84 | 102 | °C/W | t≤10 s, surface mounted FR4 1 in² pad | 2 | |
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 120 | 145 | °C/W | Steady state, surface mounted FR4 1 in² pad | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 130 | 160 | °C/W | t≤10 s, surface mounted FR4 minimum pad | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 145 | 190 | °C/W | Steady state, surface mounted FR4 minimum pad | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 60 | 75 | °C/W | Steady state | 2 | |
| Drain-to-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, ID = -250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -24V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.5 | -1 | -1.5 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 43 | 57 | mΩ | VGS = -10V, ID = -3.8A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 48 | 71 | mΩ | VGS = -4.5V, ID = -2.5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 65 | 115 | mΩ | VGS = -2.5V, ID = -2.0A | 3 | |
| Forward Transconductance | gFS | 6 | 16 | S | VDS = -5 V, ID = -3.8A | 3 | |
| Forward Voltage | VSD | -0.8 | -1.5 | V | VGS = 0 V, IS = -1A | 3 |
CAD (KiCad official)
- Symbol:
WPM3020-3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wpm3020-3-etched.step/wpm3020-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm3020-3.step/wpm3020-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (9 pp, sha256
f0a5438c34b57e67, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).