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WPM2301-3

Public Made by Adom

by adom

WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WPM2301-3

WILLSEMI Will Semicon · MOSFETs · SOT-23

WPM2301-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±8 V.
2 S passive Source of the P-channel MOSFET; drain-source voltage is rated VDS -20 V.
3 D passive Drain of the P-channel MOSFET; continuous drain current is rated -2.7 A at TA=25°C with pulsed drain current IDM of 10 A.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current (note a), 10 s ID -2.7 A TA=25°C, t≤10 s, surface mounted (note a) 1
Continuous Drain Current (note a), steady state ID -2.5 A TA=25°C, steady state, surface mounted (note a) 1
Continuous Drain Current (note a), 10 s ID -2.2 A TA=70°C, t≤10 s, surface mounted (note a) 1
Continuous Drain Current (note a), steady state ID -1.9 A TA=70°C, steady state, surface mounted (note a) 1
Continuous Drain Current (note b), 10 s ID -2.4 A TA=25°C, t≤10 s, minimum pad (note b) 1
Continuous Drain Current (note b), steady state ID -2.2 A TA=25°C, steady state, minimum pad (note b) 1
Continuous Drain Current (note b), 10 s ID -1.9 A TA=70°C, t≤10 s, minimum pad (note b) 1
Continuous Drain Current (note b), steady state ID -1.7 A TA=70°C, steady state, minimum pad (note b) 1
Pulsed Drain Current (note c) IDM 10 A tp=10µs, duty cycle=1% (note c) 1
Operating Junction Temperature TJ 150 °C 1
Lead Temperature TL 260 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS -20 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-16V, VGS=0V, TC=25°C 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS=-16V, VGS=0V, TC=55°C 2
Gate-body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±8V 2
Gate Threshold Voltage VGS(th) -0.4 -0.6 -0.8 V VDS=VGS, ID=-250µA 2
Static Drain-Source On-resistance RDS(ON) 90 110 mΩ VGS=-4.5V, ID=-2.2A 2
Static Drain-Source On-resistance RDS(ON) 120 150 mΩ VGS=-2.5V, ID=-1.7A 2
Junction-to-Ambient Thermal Resistance (note a), t≤10 s RθJA 80 100 °C/W Single operation, t≤10 s, surface mounted (note a) 2
Junction-to-Ambient Thermal Resistance (note a), steady state RθJA 105 125 °C/W Single operation, steady state (note a) 2
Junction-to-Ambient Thermal Resistance (note b), t≤10 s RθJA 110 130 °C/W Single operation, t≤10 s (note b) 2
Junction-to-Ambient Thermal Resistance (note b), steady state RθJA 120 155 °C/W Single operation, steady state (note b) 2
Junction-to-Case Thermal Resistance RθJC 36 56 °C/W Single operation, steady state 2
Junction-to-Ambient Thermal Resistance (note a), t≤10 s RθJA 85 105 °C/W Dual operation, t≤10 s (note a) 2
Junction-to-Ambient Thermal Resistance (note a), steady state RθJA 110 130 °C/W Dual operation, steady state (note a) 2
Junction-to-Ambient Thermal Resistance (note b), t≤10 s RθJA 115 135 °C/W Dual operation, t≤10 s (note b) 2
Junction-to-Ambient Thermal Resistance (note b), steady state RθJA 125 160 °C/W Dual operation, steady state (note b) 2
Junction-to-Case Thermal Resistance RθJC 38 59 °C/W Dual operation, steady state 2
Diode Forward Voltage VSD -0.79 -1.5 V IS=-1A, VGS=0V 3
Maximum Body-diode Continuous Current IS -2 A 3
Transconductance gFS 4 6 S VDS=-10V, ID=-1.7A 3
Input Capacitance Ciss 200 300 pF VDS=-10V, VGS=0V, f=1MHz 3
Output Capacitance Coss 90 140 pF VDS=-10V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 40 60 pF VDS=-10V, VGS=0V, f=1MHz 3
Total Gate Charge Qg 4 nC VGS=-4.5V, ID=-2.2A, VDS=-10V 3
Gate Source Charge Qgs 0.5 nC VGS=-4.5V, ID=-2.2A, VDS=-10V 3
Gate Drain Charge Qgd 1 nC VGS=-4.5V, ID=-2.2A, VDS=-10V 3
Turn-On Delay Time tD(on) 8 ns VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 3
Turn-On Rise Time tr 15 ns VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 3
Turn-Off Delay Time tD(off) 35 ns VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 3
Turn-Off Fall Time tf 25 ns VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 3
Body-diode Reverse Recovery Time trr 30 ns IS=-2.1A, di/dt=100A/µs 3
Body-diode Reverse Recovery Charge Qrr 12 nC IS=-2.1A, di/dt=100A/µs 3
Gate Resistance Rg 12 Ω VDS=0V, VGS=0V, f=1MHz 3

CAD (KiCad official)

  • Symbol: WPM2301-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wpm2301-3-etched.step / wpm2301-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wpm2301-3.step / wpm2301-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256 fa16a3f1d2658fbc, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF