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WPM2301-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM2301-3
WILLSEMI Will Semicon · MOSFETs · SOT-23
WPM2301-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±8 V. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage is rated VDS -20 V. |
| 3 | D | passive | Drain of the P-channel MOSFET; continuous drain current is rated -2.7 A at TA=25°C with pulsed drain current IDM of 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current (note a), 10 s | ID | -2.7 | A | TA=25°C, t≤10 s, surface mounted (note a) | 1 | ||
| Continuous Drain Current (note a), steady state | ID | -2.5 | A | TA=25°C, steady state, surface mounted (note a) | 1 | ||
| Continuous Drain Current (note a), 10 s | ID | -2.2 | A | TA=70°C, t≤10 s, surface mounted (note a) | 1 | ||
| Continuous Drain Current (note a), steady state | ID | -1.9 | A | TA=70°C, steady state, surface mounted (note a) | 1 | ||
| Continuous Drain Current (note b), 10 s | ID | -2.4 | A | TA=25°C, t≤10 s, minimum pad (note b) | 1 | ||
| Continuous Drain Current (note b), steady state | ID | -2.2 | A | TA=25°C, steady state, minimum pad (note b) | 1 | ||
| Continuous Drain Current (note b), 10 s | ID | -1.9 | A | TA=70°C, t≤10 s, minimum pad (note b) | 1 | ||
| Continuous Drain Current (note b), steady state | ID | -1.7 | A | TA=70°C, steady state, minimum pad (note b) | 1 | ||
| Pulsed Drain Current (note c) | IDM | 10 | A | tp=10µs, duty cycle=1% (note c) | 1 | ||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Lead Temperature | TL | 260 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-16V, VGS=0V, TC=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-16V, VGS=0V, TC=55°C | 2 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -0.8 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-resistance | RDS(ON) | 90 | 110 | mΩ | VGS=-4.5V, ID=-2.2A | 2 | |
| Static Drain-Source On-resistance | RDS(ON) | 120 | 150 | mΩ | VGS=-2.5V, ID=-1.7A | 2 | |
| Junction-to-Ambient Thermal Resistance (note a), t≤10 s | RθJA | 80 | 100 | °C/W | Single operation, t≤10 s, surface mounted (note a) | 2 | |
| Junction-to-Ambient Thermal Resistance (note a), steady state | RθJA | 105 | 125 | °C/W | Single operation, steady state (note a) | 2 | |
| Junction-to-Ambient Thermal Resistance (note b), t≤10 s | RθJA | 110 | 130 | °C/W | Single operation, t≤10 s (note b) | 2 | |
| Junction-to-Ambient Thermal Resistance (note b), steady state | RθJA | 120 | 155 | °C/W | Single operation, steady state (note b) | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 36 | 56 | °C/W | Single operation, steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (note a), t≤10 s | RθJA | 85 | 105 | °C/W | Dual operation, t≤10 s (note a) | 2 | |
| Junction-to-Ambient Thermal Resistance (note a), steady state | RθJA | 110 | 130 | °C/W | Dual operation, steady state (note a) | 2 | |
| Junction-to-Ambient Thermal Resistance (note b), t≤10 s | RθJA | 115 | 135 | °C/W | Dual operation, t≤10 s (note b) | 2 | |
| Junction-to-Ambient Thermal Resistance (note b), steady state | RθJA | 125 | 160 | °C/W | Dual operation, steady state (note b) | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 38 | 59 | °C/W | Dual operation, steady state | 2 | |
| Diode Forward Voltage | VSD | -0.79 | -1.5 | V | IS=-1A, VGS=0V | 3 | |
| Maximum Body-diode Continuous Current | IS | -2 | A | 3 | |||
| Transconductance | gFS | 4 | 6 | S | VDS=-10V, ID=-1.7A | 3 | |
| Input Capacitance | Ciss | 200 | 300 | pF | VDS=-10V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 90 | 140 | pF | VDS=-10V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 40 | 60 | pF | VDS=-10V, VGS=0V, f=1MHz | 3 | |
| Total Gate Charge | Qg | 4 | nC | VGS=-4.5V, ID=-2.2A, VDS=-10V | 3 | ||
| Gate Source Charge | Qgs | 0.5 | nC | VGS=-4.5V, ID=-2.2A, VDS=-10V | 3 | ||
| Gate Drain Charge | Qgd | 1 | nC | VGS=-4.5V, ID=-2.2A, VDS=-10V | 3 | ||
| Turn-On Delay Time | tD(on) | 8 | ns | VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 | 3 | ||
| Turn-On Rise Time | tr | 15 | ns | VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 | 3 | ||
| Turn-Off Delay Time | tD(off) | 35 | ns | VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 | 3 | ||
| Turn-Off Fall Time | tf | 25 | ns | VGS=-4.5V, VDD=-16V, ID=-2.2A, RGEN=2.5 | 3 | ||
| Body-diode Reverse Recovery Time | trr | 30 | ns | IS=-2.1A, di/dt=100A/µs | 3 | ||
| Body-diode Reverse Recovery Charge | Qrr | 12 | nC | IS=-2.1A, di/dt=100A/µs | 3 | ||
| Gate Resistance | Rg | 12 | Ω | VDS=0V, VGS=0V, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
WPM2301-3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wpm2301-3-etched.step/wpm2301-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm2301-3.step/wpm2301-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256
fa16a3f1d2658fbc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).