# WPM2019-3

**WILLSEMI Will Semicon** · MOSFETs · SOT-523

WPM2019-3 from WILLSEMI Will Semicon, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement MOSFET; the absolute maximum gate-source voltage is ±5 V (VGS). |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward voltage VSD is specified from source to drain, with a typical value of -0.65 V at IS = -0.15 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -20 V (VDS) with continuous drain current ID of -0.73 A at TA = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -5 |  | 5 | V |  | 2 |
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 2 |
| Continuous Drain Current (a) | ID |  |  | -0.73 | A | a: FR4, 1 sq in pad, TA=25°C, t≤10 s | 2 |
| Continuous Drain Current (a) | ID |  |  | -0.62 | A | a: FR4, 1 sq in pad, TA=25°C, steady state | 2 |
| Continuous Drain Current (a) | ID |  |  | -0.58 | A | a: FR4, 1 sq in pad, TA=70°C, t≤10 s | 2 |
| Continuous Drain Current (a) | ID |  |  | -0.5 | A | a: FR4, 1 sq in pad, TA=70°C, steady state | 2 |
| Maximum Power Dissipation (a) | PD |  |  | 0.38 | W | a: FR4, 1 sq in pad, TA=25°C, t≤10 s | 2 |
| Maximum Power Dissipation (a) | PD |  |  | 0.28 | W | a: FR4, 1 sq in pad, TA=25°C, steady state | 2 |
| Maximum Power Dissipation (a) | PD |  |  | 0.24 | W | a: FR4, 1 sq in pad, TA=70°C, t≤10 s | 2 |
| Maximum Power Dissipation (a) | PD |  |  | 0.18 | W | a: FR4, 1 sq in pad, TA=70°C, steady state | 2 |
| Continuous Drain Current (b) | ID |  |  | -0.61 | A | b: FR4, minimum pad, TA=25°C, t≤10 s | 2 |
| Continuous Drain Current (b) | ID |  |  | -0.55 | A | b: FR4, minimum pad, TA=25°C, steady state | 2 |
| Continuous Drain Current (b) | ID |  |  | -0.49 | A | b: FR4, minimum pad, TA=70°C, t≤10 s | 2 |
| Continuous Drain Current (b) | ID |  |  | -0.44 | A | b: FR4, minimum pad, TA=70°C, steady state | 2 |
| Maximum Power Dissipation (b) | PD |  |  | 0.27 | W | b: FR4, minimum pad, TA=25°C, t≤10 s | 2 |
| Maximum Power Dissipation (b) | PD |  |  | 0.22 | W | b: FR4, minimum pad, TA=25°C, steady state | 2 |
| Maximum Power Dissipation (b) | PD |  |  | 0.17 | W | b: FR4, minimum pad, TA=70°C, t≤10 s | 2 |
| Maximum Power Dissipation (b) | PD |  |  | 0.14 | W | b: FR4, minimum pad, TA=70°C, steady state | 2 |
| Pulsed Drain Current | IDM |  |  | -1.2 | A | c: tp=10μs, duty cycle=1% | 2 |
| Operating Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Lead Temperature | TL |  |  | 260 | °C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0 V, ID = -250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS = -16 V, VGS = 0 V | 3 |
| Gate-to-Source Leakage Current | IGSS |  |  | -5 | uA | VDS = 0 V, VGS = ±5 V | 3 |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.65 | -0.9 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-Source On-resistance | RDS(on) |  | 480 | 810 | mΩ | VGS = -4.5 V, ID = -0.45 A | 3 |
| Drain-to-Source On-resistance | RDS(on) |  | 620 | 1050 | mΩ | VGS = -2.5 V, ID = -0.35 A | 3 |
| Drain-to-Source On-resistance | RDS(on) |  | 780 | 1300 | mΩ | VGS = -1.8 V, ID = -0.25 A | 3 |
| Body Diode Forward Voltage | VSD | -0.5 | -0.65 | -1.5 | V | VGS = 0 V, IS = -0.15 A | 3 |
| Junction-to-Ambient Thermal Resistance (a), t≤10 s | RθJA |  | 285 | 325 | °C/W | a: surface mounted on FR4, 1 sq in pad, 1oz copper | 2 |
| Junction-to-Ambient Thermal Resistance (a), steady state | RθJA |  | 355 | 440 | °C/W | a: surface mounted on FR4, 1 sq in pad, 1oz copper | 2 |
| Junction-to-Ambient Thermal Resistance (b), t≤10 s | RθJA |  | 395 | 460 | °C/W | b: surface mounted on FR4, minimum pad, 1oz copper | 2 |
| Junction-to-Ambient Thermal Resistance (b), steady state | RθJA |  | 465 | 560 | °C/W | b: surface mounted on FR4, minimum pad, 1oz copper | 2 |
| Junction-to-Case Thermal Resistance | RθJC |  | 280 | 320 | °C/W | steady state | 2 |

## CAD (KiCad official)

- Symbol: `WPM2019-3`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `wpm2019-3-etched.step` / `wpm2019-3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wpm2019-3.step` / `wpm2019-3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884733392117760) (6 pp, sha256 `f233b15f33167fcb`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wpm2019-3-datasheet.pdf)