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WPM2019-3
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WILLSEMI Will Semicon MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM2019-3
WILLSEMI Will Semicon · MOSFETs · SOT-523
WPM2019-3 from WILLSEMI Will Semicon, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement MOSFET; the absolute maximum gate-source voltage is ±5 V (VGS). |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward voltage VSD is specified from source to drain, with a typical value of -0.65 V at IS = -0.15 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -20 V (VDS) with continuous drain current ID of -0.73 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -5 | 5 | V | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | 2 | |||
| Continuous Drain Current (a) | ID | -0.73 | A | a: FR4, 1 sq in pad, TA=25°C, t≤10 s | 2 | ||
| Continuous Drain Current (a) | ID | -0.62 | A | a: FR4, 1 sq in pad, TA=25°C, steady state | 2 | ||
| Continuous Drain Current (a) | ID | -0.58 | A | a: FR4, 1 sq in pad, TA=70°C, t≤10 s | 2 | ||
| Continuous Drain Current (a) | ID | -0.5 | A | a: FR4, 1 sq in pad, TA=70°C, steady state | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.38 | W | a: FR4, 1 sq in pad, TA=25°C, t≤10 s | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.28 | W | a: FR4, 1 sq in pad, TA=25°C, steady state | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.24 | W | a: FR4, 1 sq in pad, TA=70°C, t≤10 s | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.18 | W | a: FR4, 1 sq in pad, TA=70°C, steady state | 2 | ||
| Continuous Drain Current (b) | ID | -0.61 | A | b: FR4, minimum pad, TA=25°C, t≤10 s | 2 | ||
| Continuous Drain Current (b) | ID | -0.55 | A | b: FR4, minimum pad, TA=25°C, steady state | 2 | ||
| Continuous Drain Current (b) | ID | -0.49 | A | b: FR4, minimum pad, TA=70°C, t≤10 s | 2 | ||
| Continuous Drain Current (b) | ID | -0.44 | A | b: FR4, minimum pad, TA=70°C, steady state | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.27 | W | b: FR4, minimum pad, TA=25°C, t≤10 s | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.22 | W | b: FR4, minimum pad, TA=25°C, steady state | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.17 | W | b: FR4, minimum pad, TA=70°C, t≤10 s | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.14 | W | b: FR4, minimum pad, TA=70°C, steady state | 2 | ||
| Pulsed Drain Current | IDM | -1.2 | A | c: tp=10μs, duty cycle=1% | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = -250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -16 V, VGS = 0 V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -5 | uA | VDS = 0 V, VGS = ±5 V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.65 | -0.9 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-Source On-resistance | RDS(on) | 480 | 810 | mΩ | VGS = -4.5 V, ID = -0.45 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 620 | 1050 | mΩ | VGS = -2.5 V, ID = -0.35 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 780 | 1300 | mΩ | VGS = -1.8 V, ID = -0.25 A | 3 | |
| Body Diode Forward Voltage | VSD | -0.5 | -0.65 | -1.5 | V | VGS = 0 V, IS = -0.15 A | 3 |
| Junction-to-Ambient Thermal Resistance (a), t≤10 s | RθJA | 285 | 325 | °C/W | a: surface mounted on FR4, 1 sq in pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (a), steady state | RθJA | 355 | 440 | °C/W | a: surface mounted on FR4, 1 sq in pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (b), t≤10 s | RθJA | 395 | 460 | °C/W | b: surface mounted on FR4, minimum pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (b), steady state | RθJA | 465 | 560 | °C/W | b: surface mounted on FR4, minimum pad, 1oz copper | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 280 | 320 | °C/W | steady state | 2 |
CAD (KiCad official)
- Symbol:
WPM2019-3 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
wpm2019-3-etched.step/wpm2019-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm2019-3.step/wpm2019-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256
f233b15f33167fcb, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).