# WNM3008-3

**WILLSEMI Will Semicon** · MOSFETs · SOT-23

WNM3008-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a Gate-Source Voltage rating of ±20 V (printed as 'f20'). |
| 2 | S | passive | Source of the N-channel MOSFET; the 30 V Drain-Source Voltage and ±20 V Gate-Source Voltage ratings are referenced to this terminal. |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet rates Drain-Source Voltage VDS at 30 V and continuous drain current ID at 3.1 A (TA=25°C, 10 s). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current (note a) | ID |  |  | 3.1 | A | TA=25°C, t≤10 s | 2 |
| Continuous Drain Current (note a) | ID |  |  | 2.8 | A | TA=25°C, steady state | 2 |
| Continuous Drain Current (note a) | ID |  |  | 2.5 | A | TA=70°C, t≤10 s | 2 |
| Continuous Drain Current (note a) | ID |  |  | 2.3 | A | TA=70°C, steady state | 2 |
| Maximum Power Dissipation (note a) | PD |  |  | 0.8 | W | TA=25°C, t≤10 s | 2 |
| Maximum Power Dissipation (note a) | PD |  |  | 0.7 | W | TA=25°C, steady state | 2 |
| Maximum Power Dissipation (note a) | PD |  |  | 0.5 | W | TA=70°C, t≤10 s | 2 |
| Maximum Power Dissipation (note a) | PD |  |  | 0.4 | W | TA=70°C, steady state | 2 |
| Continuous Drain Current (note b) | ID |  |  | 2.8 | A | TA=25°C, t≤10 s | 2 |
| Continuous Drain Current (note b) | ID |  |  | 2.6 | A | TA=25°C, steady state | 2 |
| Continuous Drain Current (note b) | ID |  |  | 2.2 | A | TA=70°C, t≤10 s | 2 |
| Continuous Drain Current (note b) | ID |  |  | 2.1 | A | TA=70°C, steady state | 2 |
| Maximum Power Dissipation (note b) | PD |  |  | 0.6 | W | TA=25°C, t≤10 s | 2 |
| Maximum Power Dissipation (note b) | PD |  |  | 0.5 | W | TA=25°C, steady state | 2 |
| Maximum Power Dissipation (note b) | PD |  |  | 0.4 | W | TA=70°C, t≤10 s | 2 |
| Maximum Power Dissipation (note b) | PD |  |  | 0.3 | W | TA=70°C, steady state | 2 |
| Pulsed Drain Current | IDM |  |  | 10 | A | Pulse width<380μs, duty cycle<2% | 2 |
| Operating Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Lead Temperature | TL |  |  | 260 | °C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 2 |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA |  | 125 | 150 | °C/W | t≤10 s, surface mounted on FR-4, 1 sq in pad | 2 |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA |  | 140 | 175 | °C/W | Steady state, surface mounted on FR-4, 1 sq in pad | 2 |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA |  | 150 | 180 | °C/W | t≤10 s, surface mounted on FR-4, minimum pad | 2 |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA |  | 165 | 210 | °C/W | Steady state, surface mounted on FR-4, minimum pad | 2 |
| Junction-to-Case Thermal Resistance | RθJC |  | 60 | 76 | °C/W | Steady state | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0 V, ID = 250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS = 24V, VGS = 0V | 3 |
| Gate-to-source Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±20V | 3 |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1.4 | 2 | V | VGS = VDS, ID = 250uA | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 44 | 62 | mΩ | VGS = 10V, ID = 3.1A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 57 | 77 | mΩ | VGS = 4.5V, ID = 2.0A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 180 | 235 | mΩ | VGS = 2.5V, ID = 1.0A | 3 |
| Forward Transconductance | gFS | 5 |  |  | S | VDS = 4.5V, ID = 2.8A | 3 |
| Forward Voltage | VSD |  | 0.8 | 1.5 | V | VGS = 0 V, IS = 1.5A | 3 |

## CAD (KiCad official)

- Symbol: `WNM3008-3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wnm3008-3-etched.step` / `wnm3008-3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wnm3008-3.step` / `wnm3008-3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954811915489280) (7 pp, sha256 `254f7d1e5ce62d23`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wnm3008-3-datasheet.pdf)