component
WNM01N11-6
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WNM01N11-6
WILLSEMI Will Semicon · MOSFETs · SOT-23-6L
WNM01N11-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V, continuous ID 1.5 A steady state at TA=25°C on 1 in² pad), internally common with pins 2, 5 and 6. |
| 2 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 5 and 6. |
| 3 | G | input | Gate of the N-channel MOSFET with VGS limit ±20 V and threshold VGS(TH) of 1 V min to 2.5 V max at ID=250 µA. |
| 4 | S | passive | Source of the N-channel MOSFET, with pulsed drain current up to 7 A. |
| 5 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 2 and 6. |
| 6 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 2 and 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 110 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (note a) | ID | 2.13 | A | Note a; TA=25°C; 1S | 2 | ||
| Continuous Drain Current (note a) | ID | 1.8 | A | Note a; TA=25°C; 10S | 2 | ||
| Continuous Drain Current (note a) | ID | 1.5 | A | Note a; TA=25°C; Steady State | 2 | ||
| Continuous Drain Current (note a) | ID | 1.7 | A | Note a; TA=70°C; 1S | 2 | ||
| Continuous Drain Current (note a) | ID | 1.44 | A | Note a; TA=70°C; 10S | 2 | ||
| Continuous Drain Current (note a) | ID | 1.2 | A | Note a; TA=70°C; Steady State | 2 | ||
| Maximum Power Dissipation (note a) | PD | 2.5 | W | Note a; TA=25°C; 1S | 2 | ||
| Maximum Power Dissipation (note a) | PD | 1.78 | W | Note a; TA=25°C; 10S | 2 | ||
| Maximum Power Dissipation (note a) | PD | 1.25 | W | Note a; TA=25°C; Steady State | 2 | ||
| Maximum Power Dissipation (note a) | PD | 1.6 | W | Note a; TA=70°C; 1S | 2 | ||
| Maximum Power Dissipation (note a) | PD | 1.14 | W | Note a; TA=70°C; 10S | 2 | ||
| Maximum Power Dissipation (note a) | PD | 0.8 | W | Note a; TA=70°C; Steady State | 2 | ||
| Continuous Drain Current (note b) | ID | 1.8 | A | Note b; TA=25°C; 1S | 2 | ||
| Continuous Drain Current (note b) | ID | 1.59 | A | Note b; TA=25°C; 10S | 2 | ||
| Continuous Drain Current (note b) | ID | 1.4 | A | Note b; TA=25°C; Steady State | 2 | ||
| Continuous Drain Current (note b) | ID | 1.44 | A | Note b; TA=70°C; 1S | 2 | ||
| Continuous Drain Current (note b) | ID | 1.27 | A | Note b; TA=70°C; 10S | 2 | ||
| Continuous Drain Current (note b) | ID | 1.12 | A | Note b; TA=70°C; Steady State | 2 | ||
| Maximum Power Dissipation (note b) | PD | 1.78 | W | Note b; TA=25°C; 1S | 2 | ||
| Maximum Power Dissipation (note b) | PD | 1.39 | W | Note b; TA=25°C; 10S | 2 | ||
| Maximum Power Dissipation (note b) | PD | 1.08 | W | Note b; TA=25°C; Steady State | 2 | ||
| Maximum Power Dissipation (note b) | PD | 1.14 | W | Note b; TA=70°C; 1S | 2 | ||
| Maximum Power Dissipation (note b) | PD | 0.88 | W | Note b; TA=70°C; 10S | 2 | ||
| Maximum Power Dissipation (note b) | PD | 0.69 | W | Note b; TA=70°C; Steady State | 2 | ||
| Pulsed Drain Current (note c) | IDM | 7 | A | Note c; pulse width <380 µs, duty cycle <2% | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 110 | V | VGS = 0V, ID = 250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 90V, VGS = 0V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.9 | 2.5 | V | VGS = VDS, ID = 250uA | 3 |
| Drain-to-Source On-resistance (note b, c) | RDS(on) | 230 | 310 | mΩ | VGS = 10V, ID = 1.4A | 3 | |
| Drain-to-Source On-resistance (note b, c) | RDS(on) | 250 | 350 | mΩ | VGS = 4.5V, ID = 1.3A | 3 | |
| Forward Transconductance | gfs | 1.1 | S | VDS = 10V, ID = 3A | 3 | ||
| Input Capacitance | CISS | 300 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 25 V | 3 | ||
| Output Capacitance | COSS | 25.6 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 25 V | 3 | ||
| Reverse Transfer Capacitance | CRSS | 15.6 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 25 V | 3 | ||
| Total Gate Charge | QG(TOT) | 7.5 | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 | ||
| Threshold Gate Charge | QG(TH) | 0.7 | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 | ||
| Gate-to-Source Charge | QGS | 1.1 | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 | ||
| Gate-to-Drain Charge | QGD | 2.1 | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 | ||
| Turn-On Delay Time | td(ON) | 11.8 | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 | ||
| Rise Time | tr | 13.2 | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 32.8 | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 | ||
| Fall Time | tf | 4.8 | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 | ||
| Forward Voltage (body diode) | VSD | 0.8 | 1.2 | V | VGS = 0 V, IS = 1A | 3 | |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA | 36 | 50 | °C/W | Note a; t ≤ 1 s | 2 | |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA | 50 | 70 | °C/W | Note a; t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA | 75 | 100 | °C/W | Note a; Steady State | 2 | |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA | 50 | 70 | °C/W | Note b; t ≤ 1 s | 2 | |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA | 75 | 90 | °C/W | Note b; t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA | 95 | 115 | °C/W | Note b; Steady State | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 55 | 70 | °C/W | Steady State | 2 |
CAD (KiCad official)
- Symbol:
WNM01N11-6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
wnm01n11-6-etched.step/wnm01n11-6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wnm01n11-6.step/wnm01n11-6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256
21b2f2863e7072f7, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WNM01N11-6
**WILLSEMI Will Semicon** · MOSFETs · SOT-23-6L
WNM01N11-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V, continuous ID 1.5 A steady state at TA=25°C on 1 in² pad), internally common with pins 2, 5 and 6. |
| 2 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 5 and 6. |
| 3 | G | input | Gate of the N-channel MOSFET with VGS limit ±20 V and threshold VGS(TH) of 1 V min to 2.5 V max at ID=250 µA. |
| 4 | S | passive | Source of the N-channel MOSFET, with pulsed drain current up to 7 A. |
| 5 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 2 and 6. |
| 6 | D | passive | Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 2 and 5. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 110 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (note a) | ID | | | 2.13 | A | Note a; TA=25°C; 1S | 2 |
| Continuous Drain Current (note a) | ID | | | 1.8 | A | Note a; TA=25°C; 10S | 2 |
| Continuous Drain Current (note a) | ID | | | 1.5 | A | Note a; TA=25°C; Steady State | 2 |
| Continuous Drain Current (note a) | ID | | | 1.7 | A | Note a; TA=70°C; 1S | 2 |
| Continuous Drain Current (note a) | ID | | | 1.44 | A | Note a; TA=70°C; 10S | 2 |
| Continuous Drain Current (note a) | ID | | | 1.2 | A | Note a; TA=70°C; Steady State | 2 |
| Maximum Power Dissipation (note a) | PD | | | 2.5 | W | Note a; TA=25°C; 1S | 2 |
| Maximum Power Dissipation (note a) | PD | | | 1.78 | W | Note a; TA=25°C; 10S | 2 |
| Maximum Power Dissipation (note a) | PD | | | 1.25 | W | Note a; TA=25°C; Steady State | 2 |
| Maximum Power Dissipation (note a) | PD | | | 1.6 | W | Note a; TA=70°C; 1S | 2 |
| Maximum Power Dissipation (note a) | PD | | | 1.14 | W | Note a; TA=70°C; 10S | 2 |
| Maximum Power Dissipation (note a) | PD | | | 0.8 | W | Note a; TA=70°C; Steady State | 2 |
| Continuous Drain Current (note b) | ID | | | 1.8 | A | Note b; TA=25°C; 1S | 2 |
| Continuous Drain Current (note b) | ID | | | 1.59 | A | Note b; TA=25°C; 10S | 2 |
| Continuous Drain Current (note b) | ID | | | 1.4 | A | Note b; TA=25°C; Steady State | 2 |
| Continuous Drain Current (note b) | ID | | | 1.44 | A | Note b; TA=70°C; 1S | 2 |
| Continuous Drain Current (note b) | ID | | | 1.27 | A | Note b; TA=70°C; 10S | 2 |
| Continuous Drain Current (note b) | ID | | | 1.12 | A | Note b; TA=70°C; Steady State | 2 |
| Maximum Power Dissipation (note b) | PD | | | 1.78 | W | Note b; TA=25°C; 1S | 2 |
| Maximum Power Dissipation (note b) | PD | | | 1.39 | W | Note b; TA=25°C; 10S | 2 |
| Maximum Power Dissipation (note b) | PD | | | 1.08 | W | Note b; TA=25°C; Steady State | 2 |
| Maximum Power Dissipation (note b) | PD | | | 1.14 | W | Note b; TA=70°C; 1S | 2 |
| Maximum Power Dissipation (note b) | PD | | | 0.88 | W | Note b; TA=70°C; 10S | 2 |
| Maximum Power Dissipation (note b) | PD | | | 0.69 | W | Note b; TA=70°C; Steady State | 2 |
| Pulsed Drain Current (note c) | IDM | | | 7 | A | Note c; pulse width <380 µs, duty cycle <2% | 2 |
| Operating Junction Temperature | TJ | -55 | | 150 | °C | | 2 |
| Lead Temperature | TL | | | 260 | °C | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 110 | | | V | VGS = 0V, ID = 250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS = 90V, VGS = 0V | 3 |
| Gate-to-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20V | 3 |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.9 | 2.5 | V | VGS = VDS, ID = 250uA | 3 |
| Drain-to-Source On-resistance (note b, c) | RDS(on) | | 230 | 310 | mΩ | VGS = 10V, ID = 1.4A | 3 |
| Drain-to-Source On-resistance (note b, c) | RDS(on) | | 250 | 350 | mΩ | VGS = 4.5V, ID = 1.3A | 3 |
| Forward Transconductance | gfs | | 1.1 | | S | VDS = 10V, ID = 3A | 3 |
| Input Capacitance | CISS | | 300 | | pF | VGS = 0 V, f = 1.0 MHz, VDS = 25 V | 3 |
| Output Capacitance | COSS | | 25.6 | | pF | VGS = 0 V, f = 1.0 MHz, VDS = 25 V | 3 |
| Reverse Transfer Capacitance | CRSS | | 15.6 | | pF | VGS = 0 V, f = 1.0 MHz, VDS = 25 V | 3 |
| Total Gate Charge | QG(TOT) | | 7.5 | | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 |
| Threshold Gate Charge | QG(TH) | | 0.7 | | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 |
| Gate-to-Source Charge | QGS | | 1.1 | | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 |
| Gate-to-Drain Charge | QGD | | 2.1 | | nC | VGS = 10 V, VDD = 80 V, ID = 1.5 A | 3 |
| Turn-On Delay Time | td(ON) | | 11.8 | | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 |
| Rise Time | tr | | 13.2 | | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 |
| Turn-Off Delay Time | td(OFF) | | 32.8 | | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 |
| Fall Time | tf | | 4.8 | | ns | VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω | 3 |
| Forward Voltage (body diode) | VSD | | 0.8 | 1.2 | V | VGS = 0 V, IS = 1A | 3 |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA | | 36 | 50 | °C/W | Note a; t ≤ 1 s | 2 |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA | | 50 | 70 | °C/W | Note a; t ≤ 10 s | 2 |
| Junction-to-Ambient Thermal Resistance (note a) | RθJA | | 75 | 100 | °C/W | Note a; Steady State | 2 |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA | | 50 | 70 | °C/W | Note b; t ≤ 1 s | 2 |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA | | 75 | 90 | °C/W | Note b; t ≤ 10 s | 2 |
| Junction-to-Ambient Thermal Resistance (note b) | RθJA | | 95 | 115 | °C/W | Note b; Steady State | 2 |
| Junction-to-Case Thermal Resistance | RθJC | | 55 | 70 | °C/W | Steady State | 2 |
## CAD (KiCad official)
- Symbol: `WNM01N11-6`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `wnm01n11-6-etched.step` / `wnm01n11-6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wnm01n11-6.step` / `wnm01n11-6.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590210040960212993) (8 pp, sha256 `21b2f2863e7072f7`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wnm01n11-6-datasheet.pdf)