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WNM01N11-6

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WILLSEMI Will Semicon MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WNM01N11-6

WILLSEMI Will Semicon · MOSFETs · SOT-23-6L

WNM01N11-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel MOSFET (VDS max 110 V, continuous ID 1.5 A steady state at TA=25°C on 1 in² pad), internally common with pins 2, 5 and 6.
2 D passive Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 5 and 6.
3 G input Gate of the N-channel MOSFET with VGS limit ±20 V and threshold VGS(TH) of 1 V min to 2.5 V max at ID=250 µA.
4 S passive Source of the N-channel MOSFET, with pulsed drain current up to 7 A.
5 D passive Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 2 and 6.
6 D passive Drain of the N-channel MOSFET (VDS max 110 V), internally common with pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 110 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current (note a) ID 2.13 A Note a; TA=25°C; 1S 2
Continuous Drain Current (note a) ID 1.8 A Note a; TA=25°C; 10S 2
Continuous Drain Current (note a) ID 1.5 A Note a; TA=25°C; Steady State 2
Continuous Drain Current (note a) ID 1.7 A Note a; TA=70°C; 1S 2
Continuous Drain Current (note a) ID 1.44 A Note a; TA=70°C; 10S 2
Continuous Drain Current (note a) ID 1.2 A Note a; TA=70°C; Steady State 2
Maximum Power Dissipation (note a) PD 2.5 W Note a; TA=25°C; 1S 2
Maximum Power Dissipation (note a) PD 1.78 W Note a; TA=25°C; 10S 2
Maximum Power Dissipation (note a) PD 1.25 W Note a; TA=25°C; Steady State 2
Maximum Power Dissipation (note a) PD 1.6 W Note a; TA=70°C; 1S 2
Maximum Power Dissipation (note a) PD 1.14 W Note a; TA=70°C; 10S 2
Maximum Power Dissipation (note a) PD 0.8 W Note a; TA=70°C; Steady State 2
Continuous Drain Current (note b) ID 1.8 A Note b; TA=25°C; 1S 2
Continuous Drain Current (note b) ID 1.59 A Note b; TA=25°C; 10S 2
Continuous Drain Current (note b) ID 1.4 A Note b; TA=25°C; Steady State 2
Continuous Drain Current (note b) ID 1.44 A Note b; TA=70°C; 1S 2
Continuous Drain Current (note b) ID 1.27 A Note b; TA=70°C; 10S 2
Continuous Drain Current (note b) ID 1.12 A Note b; TA=70°C; Steady State 2
Maximum Power Dissipation (note b) PD 1.78 W Note b; TA=25°C; 1S 2
Maximum Power Dissipation (note b) PD 1.39 W Note b; TA=25°C; 10S 2
Maximum Power Dissipation (note b) PD 1.08 W Note b; TA=25°C; Steady State 2
Maximum Power Dissipation (note b) PD 1.14 W Note b; TA=70°C; 1S 2
Maximum Power Dissipation (note b) PD 0.88 W Note b; TA=70°C; 10S 2
Maximum Power Dissipation (note b) PD 0.69 W Note b; TA=70°C; Steady State 2
Pulsed Drain Current (note c) IDM 7 A Note c; pulse width <380 µs, duty cycle <2% 2
Operating Junction Temperature TJ -55 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Drain-to-Source Breakdown Voltage BVDSS 110 V VGS = 0V, ID = 250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 90V, VGS = 0V 3
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±20V 3
Gate Threshold Voltage VGS(TH) 1 1.9 2.5 V VGS = VDS, ID = 250uA 3
Drain-to-Source On-resistance (note b, c) RDS(on) 230 310 mΩ VGS = 10V, ID = 1.4A 3
Drain-to-Source On-resistance (note b, c) RDS(on) 250 350 mΩ VGS = 4.5V, ID = 1.3A 3
Forward Transconductance gfs 1.1 S VDS = 10V, ID = 3A 3
Input Capacitance CISS 300 pF VGS = 0 V, f = 1.0 MHz, VDS = 25 V 3
Output Capacitance COSS 25.6 pF VGS = 0 V, f = 1.0 MHz, VDS = 25 V 3
Reverse Transfer Capacitance CRSS 15.6 pF VGS = 0 V, f = 1.0 MHz, VDS = 25 V 3
Total Gate Charge QG(TOT) 7.5 nC VGS = 10 V, VDD = 80 V, ID = 1.5 A 3
Threshold Gate Charge QG(TH) 0.7 nC VGS = 10 V, VDD = 80 V, ID = 1.5 A 3
Gate-to-Source Charge QGS 1.1 nC VGS = 10 V, VDD = 80 V, ID = 1.5 A 3
Gate-to-Drain Charge QGD 2.1 nC VGS = 10 V, VDD = 80 V, ID = 1.5 A 3
Turn-On Delay Time td(ON) 11.8 ns VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω 3
Rise Time tr 13.2 ns VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω 3
Turn-Off Delay Time td(OFF) 32.8 ns VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω 3
Fall Time tf 4.8 ns VGS = 10 V, VDD = 50 V, RL=50 Ω, RG=3.3 Ω 3
Forward Voltage (body diode) VSD 0.8 1.2 V VGS = 0 V, IS = 1A 3
Junction-to-Ambient Thermal Resistance (note a) RθJA 36 50 °C/W Note a; t ≤ 1 s 2
Junction-to-Ambient Thermal Resistance (note a) RθJA 50 70 °C/W Note a; t ≤ 10 s 2
Junction-to-Ambient Thermal Resistance (note a) RθJA 75 100 °C/W Note a; Steady State 2
Junction-to-Ambient Thermal Resistance (note b) RθJA 50 70 °C/W Note b; t ≤ 1 s 2
Junction-to-Ambient Thermal Resistance (note b) RθJA 75 90 °C/W Note b; t ≤ 10 s 2
Junction-to-Ambient Thermal Resistance (note b) RθJA 95 115 °C/W Note b; Steady State 2
Junction-to-Case Thermal Resistance RθJC 55 70 °C/W Steady State 2

CAD (KiCad official)

  • Symbol: WNM01N11-6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: wnm01n11-6-etched.step / wnm01n11-6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm01n11-6.step / wnm01n11-6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256 21b2f2863e7072f7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF