component
WMO50N06TS
Public Made by Adomby adom
Wayon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WMO50N06TS
Wayon · MOSFETs · TO-252
WMO50N06TS from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V, with RDS(on) specified at VGS = 10 V and 4.5 V. |
| 2 | D | passive | Drain (also the mounting tab); VDS up to 60 V and continuous ID of 50 A at TC=25°C. |
| 3 | S | passive | Source; continuous body-diode source current IS is 50 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VDS = 0V, VGS = ±20V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 60V, VGS = 0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 60V, VGS = 0V, TJ=100°C | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | 12.5 | 16 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source on-Resistance | RDS(on) | 16 | 20 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 20A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 50 | A | TC=25°C | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | TA = 25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25°C | 1 | |
| Continuous Drain Current | ID | 50 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 31.6 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | TA = 25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 96.8 | mJ | VDD=25V, VGS=10V, L=0.4mH, IAS=22A | 1 | ||
| Total Power Dissipation | PD | 69.4 | W | TC=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 48 | °C/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-to-Case | RθJc | 1.8 | °C/W | 1 | |||
| Forward Transconductance | gfs | 36 | S | VDS = 10V, ID = 20A | 2 | ||
| Input Capacitance | Ciss | 2690 | pF | VDS = 30V, VGS =0V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 120 | pF | VDS = 30V, VGS =0V, f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 98 | pF | VDS = 30V, VGS =0V, f =1MHz | 2 | ||
| Gate Resistance | RG | 0.6 | Ω | f =1MHz | 2 | ||
| Total Gate Charge | Qg | 46 | nC | VGS = 10V, VDD = 30V, ID= 20A | 2 | ||
| Gate-Source Charge | Qgs | 8.5 | nC | VGS = 10V, VDD = 30V, ID= 20A | 2 | ||
| Gate-Drain Charge | Qgd | 7.5 | nC | VGS = 10V, VDD = 30V, ID= 20A | 2 | ||
| Turn-on Delay Time | td(on) | 10.5 | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 | ||
| Rise Time | tr | 21.2 | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 | ||
| Turn-off Delay Time | td(off) | 35 | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 | ||
| Fall Time | tf | 13 | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 38 | ns | IF=20A, dlF/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 72 | nC | IF=20A, dlF/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
WMO50N06TS - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wmo50n06ts-etched.step/wmo50n06ts-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wmo50n06ts.step/wmo50n06ts.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (7 pp, sha256
1ffc9f2f107f1316, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WMO50N06TS
**Wayon** · MOSFETs · TO-252
WMO50N06TS from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V, with RDS(on) specified at VGS = 10 V and 4.5 V. |
| 2 | D | passive | Drain (also the mounting tab); VDS up to 60 V and continuous ID of 50 A at TC=25°C. |
| 3 | S | passive | Source; continuous body-diode source current IS is 50 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 60V, VGS = 0V, TJ=25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS = 60V, VGS = 0V, TJ=100°C | 2 |
| Gate-Threshold Voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | | 12.5 | 16 | mΩ | VGS = 10V, ID = 20A | 2 |
| Drain-Source on-Resistance | RDS(on) | | 16 | 20 | mΩ | VGS = 4.5V, ID = 5A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS = 20A, VGS = 0V | 2 |
| Continuous Source Current | IS | | | 50 | A | TC=25°C | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | TA = 25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25°C | 1 |
| Continuous Drain Current | ID | | | 50 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 31.6 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 200 | A | TA = 25°C | 1 |
| Single Pulse Avalanche Energy | EAS | | | 96.8 | mJ | VDD=25V, VGS=10V, L=0.4mH, IAS=22A | 1 |
| Total Power Dissipation | PD | | | 69.4 | W | TC=25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 48 | °C/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-to-Case | RθJc | | | 1.8 | °C/W | | 1 |
| Forward Transconductance | gfs | | 36 | | S | VDS = 10V, ID = 20A | 2 |
| Input Capacitance | Ciss | | 2690 | | pF | VDS = 30V, VGS =0V, f =1MHz | 2 |
| Output Capacitance | Coss | | 120 | | pF | VDS = 30V, VGS =0V, f =1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 98 | | pF | VDS = 30V, VGS =0V, f =1MHz | 2 |
| Gate Resistance | RG | | 0.6 | | Ω | f =1MHz | 2 |
| Total Gate Charge | Qg | | 46 | | nC | VGS = 10V, VDD = 30V, ID= 20A | 2 |
| Gate-Source Charge | Qgs | | 8.5 | | nC | VGS = 10V, VDD = 30V, ID= 20A | 2 |
| Gate-Drain Charge | Qgd | | 7.5 | | nC | VGS = 10V, VDD = 30V, ID= 20A | 2 |
| Turn-on Delay Time | td(on) | | 10.5 | | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 |
| Rise Time | tr | | 21.2 | | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 |
| Turn-off Delay Time | td(off) | | 35 | | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 |
| Fall Time | tf | | 13 | | ns | VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A | 2 |
| Body Diode Reverse Recovery Time | trr | | 38 | | ns | IF=20A, dlF/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 72 | | nC | IF=20A, dlF/dt=100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `WMO50N06TS`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wmo50n06ts-etched.step` / `wmo50n06ts-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wmo50n06ts.step` / `wmo50n06ts.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wayon datasheet](docs/wmo50n06ts-datasheet.pdf) (7 pp, sha256 `1ffc9f2f107f1316`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wmo50n06ts-datasheet.pdf)