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WMO50N06TS

Public Made by Adom

by adom

Wayon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WMO50N06TS

Wayon · MOSFETs · TO-252

WMO50N06TS from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20 V, with RDS(on) specified at VGS = 10 V and 4.5 V.
2 D passive Drain (also the mounting tab); VDS up to 60 V and continuous ID of 50 A at TC=25°C.
3 S passive Source; continuous body-diode source current IS is 50 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Wayon
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current IGSS 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V, TJ=25°C 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 60V, VGS = 0V, TJ=100°C 2
Gate-Threshold Voltage VGS(th) 1.2 1.9 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 12.5 16 mΩ VGS = 10V, ID = 20A 2
Drain-Source on-Resistance RDS(on) 16 20 mΩ VGS = 4.5V, ID = 5A 2
Diode Forward Voltage VSD 1.2 V IS = 20A, VGS = 0V 2
Continuous Source Current IS 50 A TC=25°C 2
Drain-Source Voltage VDS 60 V TA = 25°C 1
Gate-Source Voltage VGS -20 20 V TA = 25°C 1
Continuous Drain Current ID 50 A TC=25°C 1
Continuous Drain Current ID 31.6 A TC=100°C 1
Pulsed Drain Current IDM 200 A TA = 25°C 1
Single Pulse Avalanche Energy EAS 96.8 mJ VDD=25V, VGS=10V, L=0.4mH, IAS=22A 1
Total Power Dissipation PD 69.4 W TC=25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance Junction-to-Ambient RθJA 48 °C/W Surface mounted on 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-to-Case RθJc 1.8 °C/W 1
Forward Transconductance gfs 36 S VDS = 10V, ID = 20A 2
Input Capacitance Ciss 2690 pF VDS = 30V, VGS =0V, f =1MHz 2
Output Capacitance Coss 120 pF VDS = 30V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 98 pF VDS = 30V, VGS =0V, f =1MHz 2
Gate Resistance RG 0.6 Ω f =1MHz 2
Total Gate Charge Qg 46 nC VGS = 10V, VDD = 30V, ID= 20A 2
Gate-Source Charge Qgs 8.5 nC VGS = 10V, VDD = 30V, ID= 20A 2
Gate-Drain Charge Qgd 7.5 nC VGS = 10V, VDD = 30V, ID= 20A 2
Turn-on Delay Time td(on) 10.5 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A 2
Rise Time tr 21.2 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A 2
Turn-off Delay Time td(off) 35 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A 2
Fall Time tf 13 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A 2
Body Diode Reverse Recovery Time trr 38 ns IF=20A, dlF/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 72 nC IF=20A, dlF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: WMO50N06TS
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wmo50n06ts-etched.step / wmo50n06ts-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wmo50n06ts.step / wmo50n06ts.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (7 pp, sha256 1ffc9f2f107f1316, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF