component
WMK36N60C4
Public Made by Adomby adom
Wayon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WMK36N60C4
Wayon · MOSFETs · TO-220
WMK36N60C4 from Wayon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated at ±30 V in the absolute maximum ratings. |
| 2 | D | passive | Drain pin; rated for 600 V drain-source voltage (VDSS) and 36 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source pin; the reference terminal for the ±30 V gate-source rating and the 36 A body-diode continuous forward current (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 600 | V | 1 | |||
| Continuous drain current (TC = 25°C) | ID | 36 | A | TC = 25°C | 1 | ||
| Continuous drain current (TC = 100°C) | ID | 20 | A | TC = 100°C | 1 | ||
| Pulsed drain current | IDM | 100 | A | Pulse width limited by Tj max | 1 | ||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Repetitive avalanche energy | EAR | 0.8 | mJ | Repetitive rating; pulse width limited by max junction temperature | 1 | ||
| Avalanche current, repetitive | IAR | 4 | A | 1 | |||
| Power dissipation (TC = 25°C) | PD | 277 | W | TC = 25°C, TO-220 column | 1 | ||
| Power dissipation derating above 25°C | PD | 2.22 | W/°C | Derate above 25°C | 1 | ||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Diode continuous forward current | IS | 36 | A | 1 | |||
| Diode pulse current | ISM | 100 | A | 1 | |||
| Thermal resistance, junction-to-case | RθJC | 0.45 | °C/W | TO-220 column | 1 | ||
| Thermal resistance, junction-to-ambient | RθJA | 62 | °C/W | TO-220 column | 1 | ||
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 0.25 mA | 2 |
| Drain cut-off current (Tj = 25°C) | IDSS | 1 | μA | VDS = 600 V, VGS = 0 V, Tj = 25°C | 2 | ||
| Drain cut-off current (Tj = 125°C) | IDSS | 100 | μA | VDS = 600 V, VGS = 0 V, Tj = 125°C | 2 | ||
| Gate leakage current, forward | IGSSF | 100 | nA | VGS = 20 V, VDS = 0 V | 2 | ||
| Gate leakage current, reverse | IGSSR | -100 | nA | VGS = -20 V, VDS = 0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.08 | 0.097 | Ω | VGS = 10 V, ID = 15 A, Tj = 25°C | 2 | |
| Diode forward voltage | VSD | 1.2 | V | VGS = 0 V, IF = 15 A | 2 |
CAD (KiCad official)
- Symbol:
WMK36N60C4 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wmk36n60c4-etched.step/wmk36n60c4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wmk36n60c4.step/wmk36n60c4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (12 pp, sha256
a31eb4f61b2e91e0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WMK36N60C4
**Wayon** · MOSFETs · TO-220
WMK36N60C4 from Wayon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated at ±30 V in the absolute maximum ratings. |
| 2 | D | passive | Drain pin; rated for 600 V drain-source voltage (VDSS) and 36 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source pin; the reference terminal for the ±30 V gate-source rating and the 36 A body-diode continuous forward current (IS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 600 | V | | 1 |
| Continuous drain current (TC = 25°C) | ID | | | 36 | A | TC = 25°C | 1 |
| Continuous drain current (TC = 100°C) | ID | | | 20 | A | TC = 100°C | 1 |
| Pulsed drain current | IDM | | | 100 | A | Pulse width limited by Tj max | 1 |
| Gate-source voltage | VGS | -30 | | 30 | V | | 1 |
| Repetitive avalanche energy | EAR | | | 0.8 | mJ | Repetitive rating; pulse width limited by max junction temperature | 1 |
| Avalanche current, repetitive | IAR | | | 4 | A | | 1 |
| Power dissipation (TC = 25°C) | PD | | | 277 | W | TC = 25°C, TO-220 column | 1 |
| Power dissipation derating above 25°C | PD | | | 2.22 | W/°C | Derate above 25°C | 1 |
| Operating junction and storage temperature range | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Diode continuous forward current | IS | | | 36 | A | | 1 |
| Diode pulse current | ISM | | | 100 | A | | 1 |
| Thermal resistance, junction-to-case | RθJC | | | 0.45 | °C/W | TO-220 column | 1 |
| Thermal resistance, junction-to-ambient | RθJA | | | 62 | °C/W | TO-220 column | 1 |
| Drain-source breakdown voltage | BVDSS | 600 | | | V | VGS = 0 V, ID = 1 mA | 2 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 0.25 mA | 2 |
| Drain cut-off current (Tj = 25°C) | IDSS | | | 1 | μA | VDS = 600 V, VGS = 0 V, Tj = 25°C | 2 |
| Drain cut-off current (Tj = 125°C) | IDSS | | | 100 | μA | VDS = 600 V, VGS = 0 V, Tj = 125°C | 2 |
| Gate leakage current, forward | IGSSF | | | 100 | nA | VGS = 20 V, VDS = 0 V | 2 |
| Gate leakage current, reverse | IGSSR | | | -100 | nA | VGS = -20 V, VDS = 0 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.08 | 0.097 | Ω | VGS = 10 V, ID = 15 A, Tj = 25°C | 2 |
| Diode forward voltage | VSD | | | 1.2 | V | VGS = 0 V, IF = 15 A | 2 |
## CAD (KiCad official)
- Symbol: `WMK36N60C4`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wmk36n60c4-etched.step` / `wmk36n60c4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wmk36n60c4.step` / `wmk36n60c4.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wayon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603373260612378624) (12 pp, sha256 `a31eb4f61b2e91e0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wmk36n60c4-datasheet.pdf)