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WMK36N60C4

Wayon · MOSFETs · TO-220

WMK36N60C4 from Wayon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; gate-source voltage is rated at ±30 V in the absolute maximum ratings.
2 D passive Drain pin; rated for 600 V drain-source voltage (VDSS) and 36 A continuous drain current at TC = 25°C.
3 S passive Source pin; the reference terminal for the ±30 V gate-source rating and the 36 A body-diode continuous forward current (IS).

Key specifications

Parameter Value
Manufacturer Wayon
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 600 V 1
Continuous drain current (TC = 25°C) ID 36 A TC = 25°C 1
Continuous drain current (TC = 100°C) ID 20 A TC = 100°C 1
Pulsed drain current IDM 100 A Pulse width limited by Tj max 1
Gate-source voltage VGS -30 30 V 1
Repetitive avalanche energy EAR 0.8 mJ Repetitive rating; pulse width limited by max junction temperature 1
Avalanche current, repetitive IAR 4 A 1
Power dissipation (TC = 25°C) PD 277 W TC = 25°C, TO-220 column 1
Power dissipation derating above 25°C PD 2.22 W/°C Derate above 25°C 1
Operating junction and storage temperature range Tj, Tstg -55 150 °C 1
Diode continuous forward current IS 36 A 1
Diode pulse current ISM 100 A 1
Thermal resistance, junction-to-case RθJC 0.45 °C/W TO-220 column 1
Thermal resistance, junction-to-ambient RθJA 62 °C/W TO-220 column 1
Drain-source breakdown voltage BVDSS 600 V VGS = 0 V, ID = 1 mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 0.25 mA 2
Drain cut-off current (Tj = 25°C) IDSS 1 μA VDS = 600 V, VGS = 0 V, Tj = 25°C 2
Drain cut-off current (Tj = 125°C) IDSS 100 μA VDS = 600 V, VGS = 0 V, Tj = 125°C 2
Gate leakage current, forward IGSSF 100 nA VGS = 20 V, VDS = 0 V 2
Gate leakage current, reverse IGSSR -100 nA VGS = -20 V, VDS = 0 V 2
Drain-source on-state resistance RDS(on) 0.08 0.097 Ω VGS = 10 V, ID = 15 A, Tj = 25°C 2
Diode forward voltage VSD 1.2 V VGS = 0 V, IF = 15 A 2

CAD (KiCad official)

  • Symbol: WMK36N60C4
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wmk36n60c4-etched.step / wmk36n60c4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wmk36n60c4.step / wmk36n60c4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (12 pp, sha256 a31eb4f61b2e91e0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF