# WM02N70M

**Wayon** · MOSFETs · SOT-23

WM02N70M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected input with gate-source voltage rated ±10 V maximum; threshold 0.4 to 1.0 V at 250 µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 7 A continuous (24 A pulsed) drain current. |
| 3 | D | passive | Drain terminal, rated 20 V maximum drain-source voltage and 7 A continuous drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 7 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 24 | A | Repetitive rating, pulse width limited by maximum junction temperature (note 1) | 1 |
| Power Dissipation | PD |  |  | 1.3 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 96 | °C/W | Surface mounted on FR4 board, 1 square inch pad size, 1oz single-side copper (note 2) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS = 0 V, ID = 250µA | 2 |
| Drain Cut-off Current | IDSS |  |  | 1 | µA | VDS = 20V, VGS = 0 V | 2 |
| Gate Leakage Current | IGSS | -10 |  | 10 | µA | VGS = ±10V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.62 | 1 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source on-State Resistance | RDS(on) |  | 14 | 25 | mΩ | VGS = 4.5V, ID = 6A | 2 |
| Drain-Source on-State Resistance | RDS(on) |  | 18 | 30 | mΩ | VGS = 2.5V, ID = 4A | 2 |
| Body Diode Voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS = 1A | 2 |

## CAD (KiCad official)

- Symbol: `WM02N70M`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wm02n70m-etched.step` / `wm02n70m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wm02n70m.step` / `wm02n70m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wayon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589952071467503616) (4 pp, sha256 `62584860cf1cc99a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wm02n70m-datasheet.pdf)