component

WM02N70M

Public Made by Adom

by adom

Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
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package.json Publish 0.1.0 · Ray 23d ago
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README.md Publish 0.1.0 · Ray 23d ago
wm02n70m-etched.glb Publish 0.1.0 · Ray 23d ago
wm02n70m-etched.step wm02n70m: factory component page (tier=lcsc) · Ray 23d ago
wm02n70m-hero.glb wm02n70m: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
wm02n70m-hero.overlay.json Publish 0.1.0 · Ray 23d ago
wm02n70m.glb Publish 0.1.0 · Ray 23d ago
wm02n70m.kicad_mod Publish 0.1.0 · Ray 23d ago
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WM02N70M

Wayon · MOSFETs · SOT-23

WM02N70M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD-protected input with gate-source voltage rated ±10 V maximum; threshold 0.4 to 1.0 V at 250 µA.
2 S passive Source terminal of the N-channel MOSFET, carrying up to 7 A continuous (24 A pulsed) drain current.
3 D passive Drain terminal, rated 20 V maximum drain-source voltage and 7 A continuous drain current.

Key specifications

Parameter Value
Manufacturer Wayon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -10 10 V 1
Continuous Drain Current ID 7 A 1
Pulsed Drain Current IDM 24 A Repetitive rating, pulse width limited by maximum junction temperature (note 1) 1
Power Dissipation PD 1.3 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Thermal Resistance from Junction to Ambient RθJA 96 °C/W Surface mounted on FR4 board, 1 square inch pad size, 1oz single-side copper (note 2) 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0 V, ID = 250µA 2
Drain Cut-off Current IDSS 1 µA VDS = 20V, VGS = 0 V 2
Gate Leakage Current IGSS -10 10 µA VGS = ±10V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 0.4 0.62 1 V VGS = VDS, ID = 250µA 2
Drain-Source on-State Resistance RDS(on) 14 25 mΩ VGS = 4.5V, ID = 6A 2
Drain-Source on-State Resistance RDS(on) 18 30 mΩ VGS = 2.5V, ID = 4A 2
Body Diode Voltage VSD 1.2 V VGS = 0V, IS = 1A 2

CAD (KiCad official)

  • Symbol: WM02N70M
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wm02n70m-etched.step / wm02n70m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wm02n70m.step / wm02n70m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (4 pp, sha256 62584860cf1cc99a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF