# WGP11N40

**Wild Goose** · MOSFETs · TO-220

WGP11N40 from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS of 10V for the stated RDS(on) of 0.55 Ω max, absolute maximum VGS is ±30 V. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage 400 V max and continuous drain current 11.4 A at Tc=25℃. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 11.4 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Sourse Voltage | VDSS |  |  | 400 | V |  | 1 |
| Drain Current -continuous | ID |  |  | 11.4 | A | Tc=25℃ | 1 |
| Drain Current -continuous | ID |  |  | 7.2 | A | Tc=100℃ | 1 |
| Gate-Sourse Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Plused Avanche Energy | EAS |  |  | 520 | mJ | Note1 | 1 |
| Avalanche Current | IAR |  |  | 11.4 | A | Note2 | 1 |
| Power Dissipation | PD |  |  | 147 | W | Tc=25℃ | 1 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | ℃ | 1/8 in from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 0.85 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Drain-Sourse Breakdown Voltage | BVDSS | 400 |  |  | V | ID=250μA, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | Vds=400V, Vgs=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | Vds=320V, Tc=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF |  |  | 100 | nA | Vgs=+30V, Vds=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR |  |  | -100 | nA | Vgs=-30V, Vds=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | Id=250uA, Vds=Vgs | 2 |
| Static Drain-Sourse On-Resistance | RDS(on) |  |  | 0.55 | Ω | Id=5.5A, Vgs=10V | 2 |
| Input Capacitance | Ciss |  | 1100 | 1400 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 180 | 240 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 20 | 30 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Turn-On Delay Time | Td(on) |  | 30 | 70 | nS | VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) | 2 |
| Turn-On Rise Time | Tr |  | 100 | 210 | nS | VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Delay Time | Td(off) |  | 60 | 130 | nS | VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Fall Time | Tf |  | 60 | 130 | nS | VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) | 2 |
| Total Gate Charge | Qg |  | 27 | 35 | nC | VDS=320, VGS=10V, ID=11.4A (Note 3,4) | 2 |
| Maximun Plused Drain-Sourse Diode Forwad Current | ISM |  |  | 45.6 | A |  | 2 |
| Maximun Continuous Drain-Sourse Diode Forward Current | IS |  |  | 11.4 | A |  | 2 |
| Drain-Sourse Diode Forward Voltage | VSD |  |  | 1.5 | V | Id=11.4A | 2 |
| Thermal Resistance, Case to Sink | RθCS |  | 0.5 |  | ℃/W |  | 1 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ |  | 0.42 |  | V/℃ | ID=250μA, Reference to 25℃ | 2 |
| Gate-Sourse Charge | Qgs |  | 7.3 |  | nC | VDS=320, VGS=10V, ID=11.4A (Note 3,4) | 2 |
| Gate-Drain Charge | Qgd |  | 12.3 |  | nC | VDS=320, VGS=10V, ID=11.4A (Note 3,4) | 2 |
| Reverse Recovery Time | trr |  | 240 |  | nS | IS=11.4A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |
| Reverse Recovery Charge | Qrr |  | 1.8 |  | μC | IS=11.4A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |

## CAD (KiCad official)

- Symbol: `WGP11N40`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wgp11n40-etched.step` / `wgp11n40-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgp11n40.step` / `wgp11n40.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603093054987382784) (7 pp, sha256 `6b1f31787c13e479`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgp11n40-datasheet.pdf)