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Contents

README

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WGP11N40

Wild Goose · MOSFETs · TO-220

WGP11N40 from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS of 10V for the stated RDS(on) of 0.55 Ω max, absolute maximum VGS is ±30 V.
2 D passive Drain (also connected to the tab); drain-source voltage 400 V max and continuous drain current 11.4 A at Tc=25℃.
3 S passive Source; continuous body-diode forward current IS is 11.4 A max.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Sourse Voltage VDSS 400 V 1
Drain Current -continuous ID 11.4 A Tc=25℃ 1
Drain Current -continuous ID 7.2 A Tc=100℃ 1
Gate-Sourse Voltage VGS -30 30 V 1
Single Plused Avanche Energy EAS 520 mJ Note1 1
Avalanche Current IAR 11.4 A Note2 1
Power Dissipation PD 147 W Tc=25℃ 1
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8 in from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 0.85 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Sourse Breakdown Voltage BVDSS 400 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA Vds=400V, Vgs=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA Vds=320V, Tc=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA Vgs=+30V, Vds=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA Vgs=-30V, Vds=0V 2
Gate Threshold Voltage VGS(th) 2 4 V Id=250uA, Vds=Vgs 2
Static Drain-Sourse On-Resistance RDS(on) 0.55 Ω Id=5.5A, Vgs=10V 2
Input Capacitance Ciss 1100 1400 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 180 240 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 20 30 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 30 70 nS VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 100 210 nS VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 60 130 nS VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) 2
Turn-Off Fall Time Tf 60 130 nS VDD=200V, ID=11.4A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 27 35 nC VDS=320, VGS=10V, ID=11.4A (Note 3,4) 2
Maximun Plused Drain-Sourse Diode Forwad Current ISM 45.6 A 2
Maximun Continuous Drain-Sourse Diode Forward Current IS 11.4 A 2
Drain-Sourse Diode Forward Voltage VSD 1.5 V Id=11.4A 2
Thermal Resistance, Case to Sink RθCS 0.5 ℃/W 1
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.42 V/℃ ID=250μA, Reference to 25℃ 2
Gate-Sourse Charge Qgs 7.3 nC VDS=320, VGS=10V, ID=11.4A (Note 3,4) 2
Gate-Drain Charge Qgd 12.3 nC VDS=320, VGS=10V, ID=11.4A (Note 3,4) 2
Reverse Recovery Time trr 240 nS IS=11.4A, VGS=0V, diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 1.8 μC IS=11.4A, VGS=0V, diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGP11N40
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wgp11n40-etched.step / wgp11n40-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgp11n40.step / wgp11n40.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 6b1f31787c13e479, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF