component
WGF65R850
Public Made by Adomby adom
Wild Goose MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WGF65R850
Wild Goose · MOSFETs · TO-220F
WGF65R850 from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 650 V N-channel MOSFET, rated for a gate-source voltage VGSS of ±30 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDSS of 650 V and a continuous drain current ID of 6.0 A at Tj=25℃; it is also the tab connection (D(2)). |
| 3 | Source | passive | Source terminal of the MOSFET, which carries the body-diode forward current with a maximum of 6 A (ISM 18 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current | ID | 6 | A | Tj=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | E AS | 120 | mJ | note1 | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | note2 | 1 | ||
| Power Dissipation | PD | 26 | W | Tj=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| MOSFET dv/dt ruggeness | dv/dt | 50 | V/nS | VDS=0V...480V | 1 | ||
| Thermal Resistance Junction to Case | Rθ JC | 3.13 | ℃/W | 1 | |||
| Thermal Resistance Junction to Ambient | Rθ JA | 70 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250μA, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA, VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.78 | 0.85 | Ω | ID=3A, VGS=10V | 2 | |
| Max. Diode Forward Current | Is | 6 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 18 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.5 | V | ID=6A | 2 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.67 | V/℃ | ID=250μA, Reference to 25℃ | 2 | ||
| Input Capacitance | Ciss | 350 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 350 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 20 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 | ||
| Turn-On Delay Time | Td(on) | 17 | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 | ||
| Turn-on Rise Time | Tr | 22 | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 | ||
| Turn-Off Delay Time | Td(off) | 30 | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 | ||
| Turn-Off Rise Time | Tf | 30 | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 | ||
| Total Gate Charge | Qg | 12 | nC | VDS=300V, VGS=10V, ID=6A (Note3,4) | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS=300V, VGS=10V, ID=6A (Note3,4) | 2 | ||
| Gate-Drain Charge | Qgd | 5.6 | nC | VDS=300V, VGS=10V, ID=6A (Note3,4) | 2 | ||
| Reverse Recovery Time | Trr | 290 | nS | IS=6A, VGS=0V, diF/dt=100A/μs (Note3) | 2 | ||
| Reverse Recovery Charge | Qrr | 2.2 | μC | IS=6A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |
CAD (KiCad official)
- Symbol:
WGF65R850 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (9 pp, sha256
6d8919d999abdb94, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WGF65R850
**Wild Goose** · MOSFETs · TO-220F
WGF65R850 from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 650 V N-channel MOSFET, rated for a gate-source voltage VGSS of ±30 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDSS of 650 V and a continuous drain current ID of 6.0 A at Tj=25℃; it is also the tab connection (D(2)). |
| 3 | Source | passive | Source terminal of the MOSFET, which carries the body-diode forward current with a maximum of 6 A (ISM 18 A pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |
| Drain Current | ID | | | 6 | A | Tj=25℃ | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | E AS | | | 120 | mJ | note1 | 1 |
| Pulsed Drain Current | IDM | | | 18 | A | note2 | 1 |
| Power Dissipation | PD | | | 26 | W | Tj=25℃ | 1 |
| Junction Temperature (Max) | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| MOSFET dv/dt ruggeness | dv/dt | | | 50 | V/nS | VDS=0V...480V | 1 |
| Thermal Resistance Junction to Case | Rθ JC | | | 3.13 | ℃/W | | 1 |
| Thermal Resistance Junction to Ambient | Rθ JA | | | 70 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | ID=250μA, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS=650V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS=520V, Tj=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF | | | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR | | | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | ID=250μA, VDS=VGS | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.78 | 0.85 | Ω | ID=3A, VGS=10V | 2 |
| Max. Diode Forward Current | Is | | | 6 | A | | 2 |
| Max. Pulsed Forward Current | ISM | | | 18 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.5 | V | ID=6A | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.67 | | V/℃ | ID=250μA, Reference to 25℃ | 2 |
| Input Capacitance | Ciss | | 350 | | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 350 | | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 20 | | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Turn-On Delay Time | Td(on) | | 17 | | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 |
| Turn-on Rise Time | Tr | | 22 | | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Delay Time | Td(off) | | 30 | | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Rise Time | Tf | | 30 | | nS | VDD=300V, ID=3A, RG=25Ω (Note 3,4) | 2 |
| Total Gate Charge | Qg | | 12 | | nC | VDS=300V, VGS=10V, ID=6A (Note3,4) | 2 |
| Gate-Source Charge | Qgs | | 3.5 | | nC | VDS=300V, VGS=10V, ID=6A (Note3,4) | 2 |
| Gate-Drain Charge | Qgd | | 5.6 | | nC | VDS=300V, VGS=10V, ID=6A (Note3,4) | 2 |
| Reverse Recovery Time | Trr | | 290 | | nS | IS=6A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |
| Reverse Recovery Charge | Qrr | | 2.2 | | μC | IS=6A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |
## CAD (KiCad official)
- Symbol: `WGF65R850`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603124875410358272) (9 pp, sha256 `6d8919d999abdb94`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wgf65r850-datasheet.pdf)