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WGF65R850

Wild Goose · MOSFETs · TO-220F

WGF65R850 from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the 650 V N-channel MOSFET, rated for a gate-source voltage VGSS of ±30 V.
2 Drain passive Drain terminal of the MOSFET, rated for a drain-source voltage VDSS of 650 V and a continuous drain current ID of 6.0 A at Tj=25℃; it is also the tab connection (D(2)).
3 Source passive Source terminal of the MOSFET, which carries the body-diode forward current with a maximum of 6 A (ISM 18 A pulsed).

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current ID 6 A Tj=25℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy E AS 120 mJ note1 1
Pulsed Drain Current IDM 18 A note2 1
Power Dissipation PD 26 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
MOSFET dv/dt ruggeness dv/dt 50 V/nS VDS=0V...480V 1
Thermal Resistance Junction to Case Rθ JC 3.13 ℃/W 1
Thermal Resistance Junction to Ambient Rθ JA 70 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=520V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 0.78 0.85 Ω ID=3A, VGS=10V 2
Max. Diode Forward Current Is 6 A 2
Max. Pulsed Forward Current ISM 18 A 2
Diode Forward Voltage VSD 1.5 V ID=6A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.67 V/℃ ID=250μA, Reference to 25℃ 2
Input Capacitance Ciss 350 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 350 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 17 nS VDD=300V, ID=3A, RG=25Ω (Note 3,4) 2
Turn-on Rise Time Tr 22 nS VDD=300V, ID=3A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 30 nS VDD=300V, ID=3A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 30 nS VDD=300V, ID=3A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 12 nC VDS=300V, VGS=10V, ID=6A (Note3,4) 2
Gate-Source Charge Qgs 3.5 nC VDS=300V, VGS=10V, ID=6A (Note3,4) 2
Gate-Drain Charge Qgd 5.6 nC VDS=300V, VGS=10V, ID=6A (Note3,4) 2
Reverse Recovery Time Trr 290 nS IS=6A, VGS=0V, diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 2.2 μC IS=6A, VGS=0V, diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGF65R850
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (9 pp, sha256 6d8919d999abdb94, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF