# WGD50N06S

**Wild Goose** · MOSFETs · TO-252

WGD50N06S from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the 60V N-channel MOSFET, with gate-to-source voltage rated at ±25 V (VGSS) in the absolute maximum ratings. |
| 2 | Drain (D) | passive | Drain terminal of the MOSFET, rated for 60 V drain-to-source voltage (VDSS) with 50 A continuous drain current at TC=25°C. |
| 3 | Source (S) | passive | Source terminal of the MOSFET, the reference for the 60 V drain-to-source and ±25 V gate-to-source ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V,ID=250uA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=60V,VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=125°C) | IDSS |  |  | 100 | uA | TJ=125°C | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS=VGS,ID=250uA | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 20 | mΩ | VGS=10V, ID=25A; pulse test, pulse width ≤300us, duty cycle ≤2% | 2 |
| Diode Forward Voltage | VSD |  | 0.8 | 1.2 | V | ISD= A,VGS=0V | 2 |
| Diode Continuous Forward Current | IS |  |  | 50 | A |  | 2 |
| Drain-to-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-to-Source Voltage | VGSS | -25 |  | 25 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 50 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 35 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDP |  |  | 200 | A | TC=25°C | 1 |
| Avalanche Current | IAS |  |  | 15 | A |  | 1 |
| Avalanche Energy | EAS |  |  | 300 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 85 | W | TC=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 57 | W | TC=100°C | 1 |
| Junction & Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Thermal Resistance-Junction to Case | Rθjc |  | 1.8 |  | ℃/W |  | 1 |
| Thermal Resistance-Junction to Ambient | Rθja |  | 62.5 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `WGD50N06S`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd50n06s-etched.step` / `wgd50n06s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd50n06s.step` / `wgd50n06s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600800949107634176) (7 pp, sha256 `b90d50f65ba2e4e7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd50n06s-datasheet.pdf)