component
WGD50N06S
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| wgd50n06s-etched.glb | 23d ago |
| wgd50n06s-etched.step | 23d ago |
| wgd50n06s-hero.glb | 23d ago |
| wgd50n06s-hero.overlay.json | 23d ago |
| wgd50n06s.glb | 23d ago |
| wgd50n06s.kicad_mod | 23d ago |
| wgd50n06s.kicad_sym | 23d ago |
| wgd50n06s.lbr | 23d ago |
| wgd50n06s.step | 23d ago |
WGD50N06S
Wild Goose · MOSFETs · TO-252
WGD50N06S from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the 60V N-channel MOSFET, with gate-to-source voltage rated at ±25 V (VGSS) in the absolute maximum ratings. |
| 2 | Drain (D) | passive | Drain terminal of the MOSFET, rated for 60 V drain-to-source voltage (VDSS) with 50 A continuous drain current at TC=25°C. |
| 3 | Source (S) | passive | Source terminal of the MOSFET, the reference for the 60 V drain-to-source and ±25 V gate-to-source ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=250uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=125°C) | IDSS | 100 | uA | TJ=125°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS,ID=250uA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 20 | mΩ | VGS=10V, ID=25A; pulse test, pulse width ≤300us, duty cycle ≤2% | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | ISD= A,VGS=0V | 2 | |
| Diode Continuous Forward Current | IS | 50 | A | 2 | |||
| Drain-to-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-to-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 35 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDP | 200 | A | TC=25°C | 1 | ||
| Avalanche Current | IAS | 15 | A | 1 | |||
| Avalanche Energy | EAS | 300 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 85 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 57 | W | TC=100°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance-Junction to Case | Rθjc | 1.8 | ℃/W | 1 | |||
| Thermal Resistance-Junction to Ambient | Rθja | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
WGD50N06S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd50n06s-etched.step/wgd50n06s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd50n06s.step/wgd50n06s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
b90d50f65ba2e4e7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).