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WGD4N65SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WGD4N65SE

Wild Goose · MOSFETs · TO-252

WGD4N65SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the 650 V N-channel MOSFET; the datasheet specifies gate-body leakage with VGS = ±30 V and a gate threshold (VGS(TH)) of 2 V to 4 V at ID = 250 µA.
2 D passive Drain of the MOSFET (also the tab), rated for a drain-source breakdown voltage BVDSS of 650 V minimum and a drain current ID of 4.0 A at Tj = 25 ℃.
3 S passive Source of the MOSFET, the reference terminal for VGS and VDS, with a maximum body-diode forward current IS of 4 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current, Tj=25℃ ID 4 A Tj=25℃ 1
Drain Current, Tj=100℃ ID 2.7 A Tj=100℃ 1
Gate Threshold Voltage (as printed in absolute maximum table) VGS(TH) 30 V 1
Single Pulse Avalanche Energy (note1) EAS 120 mJ 1
Avalanche Current (note2) IAR 4 A 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8in from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=520V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 2.5 Ω ID=2.0A, VGS=10V 2
Max. Diode Forward Current Is 4 A 2
Max. Pulsed Forward Current ISM 16 A 2
Diode Forward Voltage VSD 1.4 V ID=4A 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.67 V/℃ ID=250μA, Reference to 25℃ 2
Input Capacitance Ciss 560 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 48 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 5.4 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 25 nS VDD=325V, ID=4A, RG=25Ω 2
Turn-On Rise Time Tr 45 nS VDD=325V, ID=4A, RG=25Ω 2
Turn-Off Delay Time Td(off) 25 nS VDD=325V, ID=4A, RG=25Ω 2
Turn-Off Rise Time Tf 35 nS VDD=325V, ID=4A, RG=25Ω 2
Gate-Source Charge Qgs 2.8 nC VDS=520V, VGS=10V, ID=4A 2
Gate-Drain Charge Qgd 4.5 nC VDS=520V, VGS=10V, ID=4A 2
Reverse Recovery Time Trr 393 nS IS=4A, VGS=0V, diF/dt=100A/μs 2
Reverse Recovery Charge Qrr 1.5 μC IS=4A, VGS=0V, diF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: WGD4N65SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd4n65se-etched.step / wgd4n65se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd4n65se.step / wgd4n65se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 0626c44c63d6ae05, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF