# WGD20N03S

**Wild Goose** · MOSFETs · TO-252

WGD20N03S from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±20 V (VGSS). |
| 2 | Drain | passive | Drain terminal, rated for a 30 V drain-source voltage (VDSS) and 20 A continuous drain current at TC=25℃. |
| 3 | Source | passive | Source terminal, the reference for the gate-source rating (±20 V) and the drain current ratings, with 60 A pulsed drain current (IDM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 20 | A |  | 1 |
| Drain Current-Continuous | ID (100℃) |  |  | 14 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 35 | W |  | 1 |
| Single pulse avalanche energy (Note 5) | EAS |  |  | 72 | mJ | Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC |  |  | 4.3 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGSS | 1 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 15 | 16 | mΩ | VGS=10V, ID=5A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 21 | 24 | mΩ | VGS=4.5V, ID=5A | 2 |
| Forward Transconductance | gFS | 26 |  |  | S | VDS=5V,ID=20A | 2 |
| Diode Forward Current (Note 2) | IS |  |  | 20 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `WGD20N03S`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd20n03s-etched.step` / `wgd20n03s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd20n03s.step` / `wgd20n03s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603093048029437952) (6 pp, sha256 `cbfec944bd653a99`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd20n03s-datasheet.pdf)