component
WGD20N03S
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wgd20n03s-etched.glb | 17d ago |
| wgd20n03s-etched.step | 17d ago |
| wgd20n03s-hero.glb | 17d ago |
| wgd20n03s-hero.overlay.json | 17d ago |
| wgd20n03s.glb | 17d ago |
| wgd20n03s.kicad_mod | 17d ago |
| wgd20n03s.kicad_sym | 17d ago |
| wgd20n03s.lbr | 17d ago |
| wgd20n03s.step | 17d ago |
WGD20N03S
Wild Goose · MOSFETs · TO-252
WGD20N03S from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±20 V (VGSS). |
| 2 | Drain | passive | Drain terminal, rated for a 30 V drain-source voltage (VDSS) and 20 A continuous drain current at TC=25℃. |
| 3 | Source | passive | Source terminal, the reference for the gate-source rating (±20 V) and the drain current ratings, with 60 A pulsed drain current (IDM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 20 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 14 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Maximum Power Dissipation | PD | 35 | W | 1 | |||
| Single pulse avalanche energy (Note 5) | EAS | 72 | mJ | Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | 4.3 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGSS | 1 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 15 | 16 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 21 | 24 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Forward Transconductance | gFS | 26 | S | VDS=5V,ID=20A | 2 | ||
| Diode Forward Current (Note 2) | IS | 20 | A | 2 |
CAD (KiCad official)
- Symbol:
WGD20N03S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd20n03s-etched.step/wgd20n03s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd20n03s.step/wgd20n03s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (6 pp, sha256
cbfec944bd653a99, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).