# WGD10N65SE

**Wild Goose** · MOSFETs · TO-252

WGD10N65SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 650 V (VDSS) and drain current is 10 A at Tj=25℃ (6.7 A at Tj=100℃). |
| 3 | S | passive | Source terminal; body diode forward current is rated 10 A continuous and 40 A pulsed (ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Drain Current | ID |  |  | 10 | A | Tj=25℃ | 1 |
| Drain Current | ID |  |  | 6.7 | A | Tj=100℃ | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 380 | mJ | note1 | 1 |
| Avalanche Current | IAR |  |  | 10 | A | note2 | 1 |
| Power Dissipation | PD |  |  | 45 | W | Tj=25℃ | 1 |
| Junction Temperature (Max) | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Maximum lead temperature for soldering purpose | TL |  |  | 300 | ℃ | 1/8' from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.4 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | ID=250μA, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=650V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS=520V, Tj=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | ID=250μA, VDS=VGS | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.8 | 0.9 | Ω | ID=5.0A, VGS=10V | 2 |
| Max. Diode Forward Current | IS |  |  | 10 | A |  | 2 |
| Max. Pulsed Forward Current | ISM |  |  | 40 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | ID=10A | 2 |

## CAD (KiCad official)

- Symbol: `WGD10N65SE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd10n65se-etched.step` / `wgd10n65se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd10n65se.step` / `wgd10n65se.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603093053024313344) (7 pp, sha256 `0c7c169c4546c84b`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd10n65se-datasheet.pdf)