component
WGD10N65SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wgd10n65se-etched.glb | 17d ago |
| wgd10n65se-etched.step | 17d ago |
| wgd10n65se-hero.glb | 17d ago |
| wgd10n65se-hero.overlay.json | 17d ago |
| wgd10n65se.glb | 17d ago |
| wgd10n65se.kicad_mod | 17d ago |
| wgd10n65se.kicad_sym | 17d ago |
| wgd10n65se.lbr | 17d ago |
| wgd10n65se.step | 17d ago |
WGD10N65SE
Wild Goose · MOSFETs · TO-252
WGD10N65SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 650 V (VDSS) and drain current is 10 A at Tj=25℃ (6.7 A at Tj=100℃). |
| 3 | S | passive | Source terminal; body diode forward current is rated 10 A continuous and 40 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current | ID | 10 | A | Tj=25℃ | 1 | ||
| Drain Current | ID | 6.7 | A | Tj=100℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 380 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 10 | A | note2 | 1 | ||
| Power Dissipation | PD | 45 | W | Tj=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ℃ | 1/8' from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.4 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250μA, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA, VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.8 | 0.9 | Ω | ID=5.0A, VGS=10V | 2 | |
| Max. Diode Forward Current | IS | 10 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | ID=10A | 2 |
CAD (KiCad official)
- Symbol:
WGD10N65SE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd10n65se-etched.step/wgd10n65se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd10n65se.step/wgd10n65se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
0c7c169c4546c84b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).