component
W25X10CLSNIG-TR
Public Made by Adomby adom
Winbond Elec NOR FLASH, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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W25X10CLSNIG-TR
Winbond Elec · NOR FLASH · SOIC-8
W25X10CLSNIG-TR from Winbond Elec, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | /CS | input | Chip Select input that enables or disables the device; when high the device is deselected and DO (IO0, IO1) is high impedance, and /CS must go high-to-low before the first instruction after power-up and must track VCC at power-up. |
| 2 | DO (IO1) | bidirectional | Serial Data Output in standard SPI (data read on the falling edge of CLK) and IO1 in Dual SPI operation; it is at high impedance when /CS is high or /HOLD is held low while /CS is low. |
| 3 | /WP | input | Active-low Write Protect input that, together with the TB, BP1, BP0 and SRP status register bits, prevents the Status Register from being written and can hardware-protect all or part of the memory array. |
| 4 | GND | power_in | Ground reference for the device. |
| 5 | DI (IO0) | bidirectional | Serial Data Input in standard SPI (sampled on the rising edge of CLK) and IO0 in Dual SPI operation. |
| 6 | CLK | input | Serial Clock input that provides the timing for serial input and output operations, with clock operation to 104MHz. |
| 7 | /HOLD | input | Active-low Hold input that pauses the device while it is selected: when brought low while /CS is low, DO goes high impedance and DI and CLK are ignored until /HOLD returns high. |
| 8 | VCC | power_in | Power supply pin; the device operates from a single 2.3V to 3.6V supply. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winbond Elec |
| Package | SOIC-8 |
| Category | Memory |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VCC | -0.6 | 4.6 | V | 36 | ||
| Voltage Applied to Any Pin | VIO | -0.6 | V | Relative to Ground | 36 | ||
| Transient Voltage on any Pin | VIOT | -2 | V | <20nS Transient, Relative to Ground | 36 | ||
| Storage Temperature | TSTG | -65 | 150 | °C | 36 | ||
| Electrostatic Discharge Voltage | VESD | -2000 | 2000 | V | Human Body Model | 36 | |
| Supply Voltage | VCC | 2.3 | 2.7 | V | FR = 80MHz, fR = 33MHz | 36 | |
| Supply Voltage | VCC | 2.7 | 3.6 | V | FR = 104MHz, fR = 50MHz | 36 | |
| Ambient Temperature, Operating | TA | -40 | 85 | °C | Industrial | 36 | |
| VCC (min) to /CS Low | tVSL | 10 | µs | 37 | |||
| Time Delay Before Write Instruction | tPUW | 5 | ms | 37 | |||
| Write Inhibit Threshold Voltage | VWI | 1 | 2 | V | 37 | ||
| Input Capacitance | CIN | 6 | pF | VIN = 0V | 38 | ||
| Output Capacitance | COUT | 8 | pF | VOUT = 0V | 38 | ||
| Input Leakage | ILI | -2 | 2 | µA | 38 | ||
| I/O Leakage | ILO | -2 | 2 | µA | 38 | ||
| Standby Current | ICC1 | 10 | 50 | µA | /CS = VCC, VIN = GND or VCC | 38 | |
| Power-down Current | ICC2 | 1 | 5 | µA | /CS = VCC, VIN = GND or VCC | 38 | |
| Current Write Status Register | ICC4 | 8 | 12 | mA | /CS = VCC | 38 | |
| Current Page Program | ICC5 | 10 | 15 | mA | /CS = VCC | 38 | |
| Current Sector/Block Erase | ICC6 | 10 | 15 | mA | /CS = VCC | 38 | |
| Current Chip Erase | ICC7 | 10 | 15 | mA | /CS = VCC | 38 | |
| Input Low Voltage | VIL | -0.5 | V | 38 | |||
| Output Low Voltage | VOL | 0.4 | V | IOL = 100 µA | 38 | ||
| Load Capacitance | CL | 30 | pF | 39 | |||
| Input Rise and Fall Times | TR, TF | 5 | ns | 39 | |||
| Clock frequency for all instructions, except Read Data (03h) | FR | 104 | MHz | 2.7V-3.6V VCC & Industrial Temperature | 40 | ||
| Clock frequency for all instructions, except Read Data (03h) | FR | 80 | MHz | 2.3V-2.7V VCC & Industrial Temperature | 40 | ||
| Clock freq. Read Data instruction 03h | fR | 50 | MHz | 2.7V-3.6V VCC & Industrial Temperature | 40 | ||
| Clock freq. Read Data instruction 03h | fR | 33 | MHz | 2.3V-2.7V VCC & Industrial Temperature | 40 | ||
| Clock High, Low Time, for Fast Read / other instructions except Read Data | tCLH, tCLL | 4 | ns | Fast Read (0Bh, 3Bh) / other instructions except Read Data (03h) | 40 | ||
| Clock High, Low Time for Read Data | tCRLH, tCRLL | 6 | ns | Read Data (03h) instruction | 40 | ||
| /CS Active Setup Time relative to CLK | tSLCH | 5 | ns | 40 | |||
| /CS Not Active Hold Time relative to CLK | tCHSL | 5 | ns | 40 | |||
| Data In Setup Time | tDVCH | 2 | ns | 40 | |||
| Data In Hold Time | tCHDX | 5 | ns | 40 | |||
| /CS Active Hold Time relative to CLK | tCHSH | 5 | ns | 40 | |||
| /CS Deselect Time (for Array Read) | tSHSL1 | 50 | ns | Array Read | 40 | ||
| Output Disable Time | tSHQZ | 7 | ns | 40 | |||
| Clock Low to Output Valid | tCLQV1 | 8 | ns | 40 | |||
| Clock Low to Output Valid (for Read ID instructions) | tCLQV2 | 8 | ns | Read ID instructions | 40 | ||
| Output Hold Time | tCLQX | 0 | ns | 41 | |||
| /HOLD Active Setup Time relative to CLK | tHLCH | 5 | ns | 41 | |||
| /HOLD Active Hold Time relative to CLK | tCHHH | 5 | ns | 41 | |||
| /HOLD Not Active Setup Time relative to CLK | tHHCH | 5 | ns | 41 | |||
| /HOLD Not Active Hold Time relative to CLK | tCHHL | 5 | ns | 41 | |||
| /HOLD to Output High-Z | tHLQZ | 12 | ns | 41 | |||
| /HOLD to Output Low-Z | tHHQX | 7 | ns | 41 | |||
| Write Protect Setup Time Before /CS Low | tWHSL | 20 | ns | 41 | |||
| Write Protect Hold Time After /CS High | tSHWL | 100 | ns | 41 | |||
| /CS High to Power-down Mode | tDP | 3 | µs | 41 | |||
| /CS High to Standby Mode without Electronic Signature Read | tRES1 | 3 | µs | 41 | |||
| /CS High to Standby Mode with Electronic Signature Read | tRES2 | 1.8 | µs | 41 | |||
| Write Status Register Time | tW | 10 | 15 | ms | 41 | ||
| Byte Program Time (First Byte) | tBP1 | 15 | 30 | µs | 41 | ||
| Page Program Time | tPP | 0.4 | 0.8 | ms | 41 | ||
| Sector Erase Time (4KB) | tSE | 30 | 300 | ms | 41 | ||
| Block Erase Time (32KB) | tBE1 | 120 | 800 | ms | 41 | ||
| Block Erase Time (64KB) | tBE2 | 150 | 1000 | ms | 41 | ||
| Chip Erase Time | tCE | 0.25 | 1 | s | W25X10CL | 41 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | 10.1 8-Pin SOIC 150-mil (Package Code SN)...................................................................... 43 10.2 8-Pad USON 2x3-mm (Package Code UX)............................................. | 3 |
CAD (KiCad official)
- Symbol:
W25X10CLSNIG-TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
w25x10clsnig-tr-etched.step/w25x10clsnig-tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);w25x10clsnig-tr.step/w25x10clsnig-tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winbond Elec datasheet (47 pp, sha256
d105927e74ebfa88, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# W25X10CLSNIG-TR
**Winbond Elec** · NOR FLASH · SOIC-8
W25X10CLSNIG-TR from Winbond Elec, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | /CS | input | Chip Select input that enables or disables the device; when high the device is deselected and DO (IO0, IO1) is high impedance, and /CS must go high-to-low before the first instruction after power-up and must track VCC at power-up. |
| 2 | DO (IO1) | bidirectional | Serial Data Output in standard SPI (data read on the falling edge of CLK) and IO1 in Dual SPI operation; it is at high impedance when /CS is high or /HOLD is held low while /CS is low. |
| 3 | /WP | input | Active-low Write Protect input that, together with the TB, BP1, BP0 and SRP status register bits, prevents the Status Register from being written and can hardware-protect all or part of the memory array. |
| 4 | GND | power_in | Ground reference for the device. |
| 5 | DI (IO0) | bidirectional | Serial Data Input in standard SPI (sampled on the rising edge of CLK) and IO0 in Dual SPI operation. |
| 6 | CLK | input | Serial Clock input that provides the timing for serial input and output operations, with clock operation to 104MHz. |
| 7 | /HOLD | input | Active-low Hold input that pauses the device while it is selected: when brought low while /CS is low, DO goes high impedance and DI and CLK are ignored until /HOLD returns high. |
| 8 | VCC | power_in | Power supply pin; the device operates from a single 2.3V to 3.6V supply. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winbond Elec |
| Package | SOIC-8 |
| Category | Memory |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VCC | -0.6 | | 4.6 | V | | 36 |
| Voltage Applied to Any Pin | VIO | -0.6 | | | V | Relative to Ground | 36 |
| Transient Voltage on any Pin | VIOT | -2 | | | V | <20nS Transient, Relative to Ground | 36 |
| Storage Temperature | TSTG | -65 | | 150 | °C | | 36 |
| Electrostatic Discharge Voltage | VESD | -2000 | | 2000 | V | Human Body Model | 36 |
| Supply Voltage | VCC | 2.3 | | 2.7 | V | FR = 80MHz, fR = 33MHz | 36 |
| Supply Voltage | VCC | 2.7 | | 3.6 | V | FR = 104MHz, fR = 50MHz | 36 |
| Ambient Temperature, Operating | TA | -40 | | 85 | °C | Industrial | 36 |
| VCC (min) to /CS Low | tVSL | 10 | | | µs | | 37 |
| Time Delay Before Write Instruction | tPUW | | | 5 | ms | | 37 |
| Write Inhibit Threshold Voltage | VWI | 1 | | 2 | V | | 37 |
| Input Capacitance | CIN | | | 6 | pF | VIN = 0V | 38 |
| Output Capacitance | COUT | | | 8 | pF | VOUT = 0V | 38 |
| Input Leakage | ILI | -2 | | 2 | µA | | 38 |
| I/O Leakage | ILO | -2 | | 2 | µA | | 38 |
| Standby Current | ICC1 | | 10 | 50 | µA | /CS = VCC, VIN = GND or VCC | 38 |
| Power-down Current | ICC2 | | 1 | 5 | µA | /CS = VCC, VIN = GND or VCC | 38 |
| Current Write Status Register | ICC4 | | 8 | 12 | mA | /CS = VCC | 38 |
| Current Page Program | ICC5 | | 10 | 15 | mA | /CS = VCC | 38 |
| Current Sector/Block Erase | ICC6 | | 10 | 15 | mA | /CS = VCC | 38 |
| Current Chip Erase | ICC7 | | 10 | 15 | mA | /CS = VCC | 38 |
| Input Low Voltage | VIL | -0.5 | | | V | | 38 |
| Output Low Voltage | VOL | | | 0.4 | V | IOL = 100 µA | 38 |
| Load Capacitance | CL | | | 30 | pF | | 39 |
| Input Rise and Fall Times | TR, TF | | | 5 | ns | | 39 |
| Clock frequency for all instructions, except Read Data (03h) | FR | | | 104 | MHz | 2.7V-3.6V VCC & Industrial Temperature | 40 |
| Clock frequency for all instructions, except Read Data (03h) | FR | | | 80 | MHz | 2.3V-2.7V VCC & Industrial Temperature | 40 |
| Clock freq. Read Data instruction 03h | fR | | | 50 | MHz | 2.7V-3.6V VCC & Industrial Temperature | 40 |
| Clock freq. Read Data instruction 03h | fR | | | 33 | MHz | 2.3V-2.7V VCC & Industrial Temperature | 40 |
| Clock High, Low Time, for Fast Read / other instructions except Read Data | tCLH, tCLL | 4 | | | ns | Fast Read (0Bh, 3Bh) / other instructions except Read Data (03h) | 40 |
| Clock High, Low Time for Read Data | tCRLH, tCRLL | 6 | | | ns | Read Data (03h) instruction | 40 |
| /CS Active Setup Time relative to CLK | tSLCH | 5 | | | ns | | 40 |
| /CS Not Active Hold Time relative to CLK | tCHSL | 5 | | | ns | | 40 |
| Data In Setup Time | tDVCH | 2 | | | ns | | 40 |
| Data In Hold Time | tCHDX | 5 | | | ns | | 40 |
| /CS Active Hold Time relative to CLK | tCHSH | 5 | | | ns | | 40 |
| /CS Deselect Time (for Array Read) | tSHSL1 | 50 | | | ns | Array Read | 40 |
| Output Disable Time | tSHQZ | | | 7 | ns | | 40 |
| Clock Low to Output Valid | tCLQV1 | | | 8 | ns | | 40 |
| Clock Low to Output Valid (for Read ID instructions) | tCLQV2 | | | 8 | ns | Read ID instructions | 40 |
| Output Hold Time | tCLQX | 0 | | | ns | | 41 |
| /HOLD Active Setup Time relative to CLK | tHLCH | 5 | | | ns | | 41 |
| /HOLD Active Hold Time relative to CLK | tCHHH | 5 | | | ns | | 41 |
| /HOLD Not Active Setup Time relative to CLK | tHHCH | 5 | | | ns | | 41 |
| /HOLD Not Active Hold Time relative to CLK | tCHHL | 5 | | | ns | | 41 |
| /HOLD to Output High-Z | tHLQZ | | | 12 | ns | | 41 |
| /HOLD to Output Low-Z | tHHQX | | | 7 | ns | | 41 |
| Write Protect Setup Time Before /CS Low | tWHSL | 20 | | | ns | | 41 |
| Write Protect Hold Time After /CS High | tSHWL | 100 | | | ns | | 41 |
| /CS High to Power-down Mode | tDP | | | 3 | µs | | 41 |
| /CS High to Standby Mode without Electronic Signature Read | tRES1 | | | 3 | µs | | 41 |
| /CS High to Standby Mode with Electronic Signature Read | tRES2 | | | 1.8 | µs | | 41 |
| Write Status Register Time | tW | | 10 | 15 | ms | | 41 |
| Byte Program Time (First Byte) | tBP1 | | 15 | 30 | µs | | 41 |
| Page Program Time | tPP | | 0.4 | 0.8 | ms | | 41 |
| Sector Erase Time (4KB) | tSE | | 30 | 300 | ms | | 41 |
| Block Erase Time (32KB) | tBE1 | | 120 | 800 | ms | | 41 |
| Block Erase Time (64KB) | tBE2 | | 150 | 1000 | ms | | 41 |
| Chip Erase Time | tCE | | 0.25 | 1 | s | W25X10CL | 41 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | 10.1 8-Pin SOIC 150-mil (Package Code SN)...................................................................... 43 10.2 8-Pad USON 2x3-mm (Package Code UX)............................................. | 3 |
## CAD (KiCad official)
- Symbol: `W25X10CLSNIG-TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `w25x10clsnig-tr-etched.step` / `w25x10clsnig-tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `w25x10clsnig-tr.step` / `w25x10clsnig-tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winbond Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586200249992433664) (47 pp, sha256 `d105927e74ebfa88`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/w25x10clsnig-tr-datasheet.pdf)