component
VSD011N10MS-G
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Vergiga(威兆) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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VSD011N10MS-G
Vergiga(威兆) · IC · TO-252
VSD011N10MS-G from Vergiga(威兆), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a typical threshold VGS(TH) of 1.7 V (1.4 to 2.5 V) at ID=250 µA. |
| 2 | D | passive | Drain, connected to the mounting base tab; rated for 100 V drain-source breakdown and 58 A continuous current at TC=25°C. |
| 3 | S | passive | Source; the body diode carries 58 A continuous forward current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vergiga(威兆) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (Tj=125℃) | IDSS | 100 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1.4 | 1.7 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 10 | 13 | mΩ | VGS=10V, ID=35A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 13.5 | 18 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Input Capacitance | Ciss | 1260 | 1480 | 1700 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | 590 | 690 | 790 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 15 | 25 | 35 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Forward on voltage | VSD | 0.9 | 1.2 | V | ISD=35A, VGS=0V | 2 | |
| Drain-Source Voltage (breakdown rating) | V(BR)DSS | 100 | V | 1 | |||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Diode continuous forward current | IS | 58 | A | TC=25°C | 1 | ||
| Continuous drain current @VGS=10V | ID | 58 | A | TC=25°C | 1 | ||
| Continuous drain current @VGS=10V | ID | 41 | A | TC=100°C | 1 | ||
| Pulse drain current tested | IDM | 232 | A | TC=25°C | 1 | ||
| Continuous drain current @VGS=10V (surface mount) | IDSM | 8 | A | TA=25°C | 1 | ||
| Continuous drain current @VGS=10V (surface mount) | IDSM | 6 | A | TA=70°C | 1 | ||
| Avalanche energy, single pulsed | EAS | 25 | mJ | single pulsed | 1 | ||
| Maximum power dissipation | PD | 73 | W | TC=25°C | 1 | ||
| Maximum power dissipation | PDSM | 1.3 | W | TA=25°C | 1 | ||
| Storage and Junction Temperature Range | TSTG, TJ | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.05 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
VSD011N10MS-G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vsd011n10ms-g-etched.step/vsd011n10ms-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vsd011n10ms-g.step/vsd011n10ms-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vergiga(威兆) datasheet (6 pp, sha256
fbbaa948fb7e0d5e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VSD011N10MS-G
**Vergiga(威兆)** · IC · TO-252
VSD011N10MS-G from Vergiga(威兆), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a typical threshold VGS(TH) of 1.7 V (1.4 to 2.5 V) at ID=250 µA. |
| 2 | D | passive | Drain, connected to the mounting base tab; rated for 100 V drain-source breakdown and 58 A continuous current at TC=25°C. |
| 3 | S | passive | Source; the body diode carries 58 A continuous forward current at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vergiga(威兆) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (Tj=125℃) | IDSS | | | 100 | μA | VDS=100V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 1.4 | 1.7 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 10 | 13 | mΩ | VGS=10V, ID=35A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 13.5 | 18 | mΩ | VGS=4.5V, ID=10A | 2 |
| Input Capacitance | Ciss | 1260 | 1480 | 1700 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | 590 | 690 | 790 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 15 | 25 | 35 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Forward on voltage | VSD | | 0.9 | 1.2 | V | ISD=35A, VGS=0V | 2 |
| Drain-Source Voltage (breakdown rating) | V(BR)DSS | | | 100 | V | | 1 |
| Gate-Source voltage | VGS | -20 | | 20 | V | | 1 |
| Diode continuous forward current | IS | | | 58 | A | TC=25°C | 1 |
| Continuous drain current @VGS=10V | ID | | | 58 | A | TC=25°C | 1 |
| Continuous drain current @VGS=10V | ID | | | 41 | A | TC=100°C | 1 |
| Pulse drain current tested | IDM | | | 232 | A | TC=25°C | 1 |
| Continuous drain current @VGS=10V (surface mount) | IDSM | | | 8 | A | TA=25°C | 1 |
| Continuous drain current @VGS=10V (surface mount) | IDSM | | | 6 | A | TA=70°C | 1 |
| Avalanche energy, single pulsed | EAS | | | 25 | mJ | single pulsed | 1 |
| Maximum power dissipation | PD | | | 73 | W | TC=25°C | 1 |
| Maximum power dissipation | PDSM | | | 1.3 | W | TA=25°C | 1 |
| Storage and Junction Temperature Range | TSTG, TJ | -55 | | 175 | °C | | 1 |
| Thermal Resistance, Junction-to-Case | RJC | | 2.05 | | °C/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RJA | | 100 | | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `VSD011N10MS-G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `vsd011n10ms-g-etched.step` / `vsd011n10ms-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vsd011n10ms-g.step` / `vsd011n10ms-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vergiga(威兆) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603034856117465088) (6 pp, sha256 `fbbaa948fb7e0d5e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vsd011n10ms-g-datasheet.pdf)