component

VSD011N10MS-G

Public Made by Adom

by adom

Vergiga(威兆) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenticvsd011n10ms-gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

VSD011N10MS-G

Vergiga(威兆) · IC · TO-252

VSD011N10MS-G from Vergiga(威兆), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a typical threshold VGS(TH) of 1.7 V (1.4 to 2.5 V) at ID=250 µA.
2 D passive Drain, connected to the mounting base tab; rated for 100 V drain-source breakdown and 58 A continuous current at TC=25°C.
3 S passive Source; the body diode carries 58 A continuous forward current at TC=25°C.

Key specifications

Parameter Value
Manufacturer Vergiga(威兆)
Package TO-252
Category
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Zero Gate Voltage Drain Current (Tj=125℃) IDSS 100 μA VDS=100V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 1.4 1.7 2.5 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 10 13 mΩ VGS=10V, ID=35A 2
Drain-Source On-State Resistance RDS(ON) 13.5 18 mΩ VGS=4.5V, ID=10A 2
Input Capacitance Ciss 1260 1480 1700 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 590 690 790 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 15 25 35 pF VDS=30V, VGS=0V, f=1MHz 2
Forward on voltage VSD 0.9 1.2 V ISD=35A, VGS=0V 2
Drain-Source Voltage (breakdown rating) V(BR)DSS 100 V 1
Gate-Source voltage VGS -20 20 V 1
Diode continuous forward current IS 58 A TC=25°C 1
Continuous drain current @VGS=10V ID 58 A TC=25°C 1
Continuous drain current @VGS=10V ID 41 A TC=100°C 1
Pulse drain current tested IDM 232 A TC=25°C 1
Continuous drain current @VGS=10V (surface mount) IDSM 8 A TA=25°C 1
Continuous drain current @VGS=10V (surface mount) IDSM 6 A TA=70°C 1
Avalanche energy, single pulsed EAS 25 mJ single pulsed 1
Maximum power dissipation PD 73 W TC=25°C 1
Maximum power dissipation PDSM 1.3 W TA=25°C 1
Storage and Junction Temperature Range TSTG, TJ -55 175 °C 1
Thermal Resistance, Junction-to-Case RJC 2.05 °C/W 1
Thermal Resistance, Junction-to-Ambient RJA 100 °C/W 1

CAD (KiCad official)

  • Symbol: VSD011N10MS-G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: vsd011n10ms-g-etched.step / vsd011n10ms-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vsd011n10ms-g.step / vsd011n10ms-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vergiga(威兆) datasheet (6 pp, sha256 fbbaa948fb7e0d5e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF