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VS3640DS

Vanguard · MOSFETs · SOP-8

VS3640DS from Vanguard, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel), with diode continuous forward current of 2.3 A at TA=25°C.
2 G1 input Gate of MOSFET 1, 5V logic level control with gate-source voltage limit of ±20 V.
3 S2 passive Source of MOSFET 2 (N-channel), with diode continuous forward current of 2.3 A at TA=25°C.
4 G2 input Gate of MOSFET 2, 5V logic level control with gate-source voltage limit of ±20 V.
5 D2 passive Drain of MOSFET 2, rated 30 V drain-source and 9 A continuous at TA=25°C (tied to pin 6).
6 D2 passive Drain of MOSFET 2, rated 30 V drain-source and 9 A continuous at TA=25°C (tied to pin 5).
7 D1 passive Drain of MOSFET 1, rated 30 V drain-source and 9 A continuous at TA=25°C (tied to pin 8).
8 D1 passive Drain of MOSFET 1, rated 30 V drain-source and 9 A continuous at TA=25°C (tied to pin 7).

Key specifications

Parameter Value
Manufacturer Vanguard
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source breakdown voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current (Tc=25℃) IDSS 1 μA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current (Tc=125℃) IDSS 100 μA VDS=30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 1 1.9 2.5 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 16 19 mΩ VGS=10V, ID=8A 2
Drain-Source On-State Resistance RDS(ON) 24 29 mΩ VGS=4.5V, ID=4A 2
Forward on voltage VSD 0.9 1.2 V ISD=8A, VGS=0V 2
Diode continuous forward current IS 2.3 A TA=25°C 1
Continuous drain current ID 9 A VGS=10V, TA=25°C 1
Continuous drain current ID 5.7 A VGS=10V, TA=100°C 1
Pulse drain current tested IDM 36 A TA=25°C 1
Avalanche energy, single pulsed EAS 9 mJ single pulsed 1
Maximum power dissipation PD 2 W TA=25°C 1
Gate-Source voltage VGS -20 20 V 1
Storage temperature range TSTG -55 150 °C 1
Thermal Resistance-Junction to Lead RθJL 40 °C/W 1
Thermal Resistance-Junction to Ambient RθJA 62.5 °C/W 1

CAD (KiCad official)

  • Symbol: VS3640DS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: vs3640ds-etched.step / vs3640ds-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs3640ds.step / vs3640ds.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vanguard datasheet (6 pp, sha256 9f3fd23bbd4b7902, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF