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VS3618AS

Vergiga(威兆) · IC · SOP-8

VS3618AS from Vergiga(威兆), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (pins 1-3 are source); pin 1 is marked by the pin 1 index.
2 S passive Source of the N-channel MOSFET, connected with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, connected with pins 1 and 2.
4 G input Gate of the N-channel MOSFET with 5V logic-level control; VGS rated ±20 V.
5 D passive Drain of the MOSFET (pins 5-8 are drain); VDS rated 30 V.
6 D passive Drain of the MOSFET, connected with pins 5, 7 and 8.
7 D passive Drain of the MOSFET, connected with pins 5, 6 and 8.
8 D passive Drain of the MOSFET, connected with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Vergiga(威兆)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source breakdown voltage V(BR)DSS 30 V VGS=0V, ID=250μA, Tj=25°C 2
Zero gate voltage drain current IDSS 1 uA VDS=30V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current (Tj=125°C) IDSS 100 uA VDS=30V, VGS=0V, Tj=125°C 2
Gate-body leakage current IGSS -100 100 nA VGS=±20V, VDS=0V, Tj=25°C 2
Gate threshold voltage VGS(TH) 1.3 1.9 2.4 V VDS=VGS, ID=250μA, Tj=25°C 2
Drain-source on-state resistance RDS(ON) 6.6 9 mΩ VGS=10V, ID=8A, Tj=25°C; pulse width ≤300μs, duty cycle ≤2% 2
Drain-source on-state resistance RDS(ON) 9.6 13 mΩ VGS=4.5V, ID=4A, Tj=25°C; pulse width ≤300μs, duty cycle ≤2% 2
Forward on voltage VSD 0.8 1.2 V ISD=8A, VGS=0V, Tj=25°C 2
Gate-source voltage VGS -20 20 V 1
Diode continuous forward current IS 2.6 A TA=25°C 1
Continuous drain current ID 16 A VGS=10V, TA=25°C 1
Continuous drain current ID 10 A VGS=10V, TA=100°C 1
Pulse drain current IDM 64 A TA=25°C, repetitive rating; pulse width limited by max junction temperature (note 1) 1
Avalanche energy, single pulsed EAS 25 mJ Limited by TJmax, starting TJ=25°C, L=0.5mH, RG=25Ω, IAS=10A, VGS=10V (note 2) 1
Maximum power dissipation PD 3.1 W TA=25°C 1
Storage and junction temperature range TSTG ,TJ -55 150 °C 1
Thermal resistance, junction-to-lead RθJL 24 °C/W 1
Thermal resistance, junction-to-ambient RJA 40 °C/W 1

CAD (KiCad official)

  • Symbol: VS3618AS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: vs3618as-etched.step / vs3618as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs3618as.step / vs3618as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vergiga(威兆) datasheet (6 pp, sha256 88749cfa08fa8257, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF