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VS-25TTS12-M3

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Vishay Intertech Thyristors (SCR)/Modules, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VS-25TTS12-M3

Vishay Intertech · Thyristors (SCR)/Modules · TO-220AB-3

VS-25TTS12-M3 from Vishay Intertech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the single SCR, labeled (K) in the circuit configuration; this variant is rated for 1200 V VRRM and VDRM.
2 A passive Anode of the single SCR, labeled (A) in the circuit configuration; maximum on-state RMS current is 25 A and average on-state current is 16 A at TC = 93 °C.
3 G input Gate of the SCR, labeled (G); limits are 8.0 W peak gate power, 2.0 W average gate power, 1.5 A peak positive gate current, 10 V peak negative gate voltage, and 45 mA maximum DC gate current to trigger at TJ = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage (VRRM, 1200 V part) VRRM 1200 V 1
Repetitive peak off-state voltage (VDRM, 1200 V part) VDRM 1200 V 1
Maximum average on-state current IT(AV) 16 A TC = 93 °C, 180° conduction half sine wave 2
Maximum RMS on-state current IRMS 25 A 2
Maximum peak one-cycle non-repetitive surge current ITSM 270 A 10 ms sine pulse, rated VRRM applied 2
Maximum peak one-cycle non-repetitive surge current ITSM 320 A 10 ms sine pulse, no voltage reapplied 2
Maximum I2t for fusing I2t 365 A2s 10 ms sine pulse, rated VRRM applied 2
Maximum I2t for fusing I2t 515 A2s 10 ms sine pulse, no voltage reapplied 2
Maximum I2t for fusing I2t 5152 A2s t = 0.1 to 10 ms, no voltage reapplied 2
Maximum on-state voltage drop VTM 1.25 V 16 A, TJ = 25 °C 2
On-state slope resistance rt 12 mΩ TJ = 125 °C 2
Threshold voltage VT(TO) 1 V 2
Maximum reverse and direct leakage current IRM/IDM 0.5 mA TJ = 25 °C, VR = Rated VRRM/VDRM 2
Maximum reverse and direct leakage current IRM/IDM 10 mA TJ = 125 °C, VR = Rated VRRM/VDRM 2
Holding current IH 150 mA Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C 2
Maximum latching current IL 200 mA Anode supply = 6 V, resistive load, TJ = 25 °C 2
Maximum rate of rise of off-state voltage dV/dt 500 V/μs TJ = TJ max., linear to 80 °C, VDRM = Rated, Rg-k = Open 2
Maximum rate of rise of turned-on current dI/dt 150 A/μs 2
Maximum peak gate power PGM 8 W 2
Maximum average gate power PG(AV) 2 W 2
Maximum peak positive gate current +IGM 1.5 A 2
Maximum peak negative gate voltage -VGM 10 V 2
Maximum required DC gate current to trigger IGT 60 mA Anode supply = 6 V, resistive load, TJ = -10 °C 2
Maximum required DC gate current to trigger IGT 45 mA Anode supply = 6 V, resistive load, TJ = 25 °C 2
Maximum required DC gate current to trigger IGT 20 mA Anode supply = 6 V, resistive load, TJ = 125 °C 2
Maximum required DC gate voltage to trigger VGT 2.5 V Anode supply = 6 V, resistive load, TJ = -10 °C 2
Maximum required DC gate voltage to trigger VGT 2 V Anode supply = 6 V, resistive load, TJ = 25 °C 2
Maximum required DC gate voltage to trigger VGT 1 V Anode supply = 6 V, resistive load, TJ = 125 °C 2
Maximum DC gate voltage not to trigger VGD 0.25 V TJ = 125 °C, VDRM = Rated value 2
Maximum DC gate current not to trigger IGD 2 mA 2
Typical turn-on time tgt 0.9 µs TJ = 25 °C 2
Typical reverse recovery time trr 4 µs TJ = 125 °C 2
Typical turn-off time tq 110 µs 2
Maximum junction and storage temperature range TJ, TStg -40 125 °C 3
Maximum thermal resistance, junction to case RthJC 1.1 °C/W DC operation 3
Maximum thermal resistance, junction to ambient RthJA 62 °C/W 3
Typical thermal resistance, case to heatsink RthCS 0.5 °C/W Mounting surface, smooth and greased 3

CAD (KiCad official)

  • Symbol: VS-25TTS12-M3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: vs-25tts12-m3-etched.step / vs-25tts12-m3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-25tts12-m3.step / vs-25tts12-m3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 06ca04f9624c67c0, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF