component
VS-10MQ060-M3
Public Made by Adomby adom
Vishay Intertech Schottky Barrier Diodes (SBD), DO-214AC. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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VS-10MQ060-M3
Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AC
VS-10MQ060-M3 from Vishay Intertech, in a DO-214AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AC |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum forward voltage drop, 1 A | VFM | 0.63 | V | IF = 1 A, TJ = 25 °C; see fig. 1 | 2 | ||
| Maximum forward voltage drop, 1.5 A | VFM | 0.71 | V | IF = 1.5 A, TJ = 25 °C; see fig. 1 | 2 | ||
| Maximum forward voltage drop, 1 A | VFM | 0.57 | V | IF = 1 A, TJ = 125 °C; see fig. 1 | 2 | ||
| Maximum forward voltage drop, 1.5 A | VFM | 0.63 | V | IF = 1.5 A, TJ = 125 °C; see fig. 1 | 2 | ||
| Maximum reverse leakage current | IRM | 0.5 | mA | TJ = 25 °C, VR = Rated VR; see fig. 2 | 2 | ||
| Maximum reverse leakage current | IRM | 7.5 | mA | TJ = 125 °C, VR = Rated VR; see fig. 2 | 2 | ||
| Maximum average forward current | IF(AV) | 1.5 | A | 50 % duty cycle at TL = 120 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area); see fig. 4 | 1 | ||
| Maximum average forward current | IF(AV) | 1 | A | 50 % duty cycle at TL = 129 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area); see fig. 4 | 1 | ||
| Maximum peak one cycle non-repetitive surge current | IFSM | 40 | A | 5 μs sine or 3 μs rect. pulse; following any rated load condition and with rated VRRM applied; see fig. 6 | 1 | ||
| Maximum peak one cycle non-repetitive surge current | IFSM | 10 | A | 10 ms sine or 6 ms rect. pulse | 1 | ||
| Non-repetitive avalanche energy | EAS | 2 | mJ | TJ = 25 °C, IAS = 1 A, L = 4 mH | 1 | ||
| Maximum DC reverse voltage | VR | 60 | V | 1 | |||
| Maximum junction and storage temperature range | TJ, TStg | -55 | 150 | °C | 2 | ||
| Maximum voltage rate of change | dV/dt | 10000 | V/μs | Rated VR | 2 | ||
| Maximum thermal resistance, junction to ambient | RthJA | 80 | °C/W | DC operation | 2 | ||
| Threshold voltage | VF(TO) | 0.45 | V | TJ = TJ maximum | 2 | ||
| Forward slope resistance | rt | 86.8 | mΩ | 2 | |||
| Typical junction capacitance | CT | 31 | pF | VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz | 2 | ||
| Typical series inductance | LS | 2 | nH | Measured lead to lead 5 mm from package body | 2 | ||
| Repetitive avalanche current | IAR | 1 | A | Current decaying linearly to zero in 1 μs; frequency limited by TJ maximum; VA = 1.5 x VR | 1 |
CAD (KiCad official)
- Symbol:
VS-10MQ060-M3 - Footprint:
Diode_SMD:D_SMA - 3D model: DO-214AC (KiCad packages3D, STEP)
- 3D model files:
vs-10mq060-m3-etched.step/vs-10mq060-m3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vs-10mq060-m3.step/vs-10mq060-m3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
21cf23ea0c6773fe, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VS-10MQ060-M3
**Vishay Intertech** · Schottky Barrier Diodes (SBD) · DO-214AC
VS-10MQ060-M3 from Vishay Intertech, in a DO-214AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AC |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum forward voltage drop, 1 A | VFM | | | 0.63 | V | IF = 1 A, TJ = 25 °C; see fig. 1 | 2 |
| Maximum forward voltage drop, 1.5 A | VFM | | | 0.71 | V | IF = 1.5 A, TJ = 25 °C; see fig. 1 | 2 |
| Maximum forward voltage drop, 1 A | VFM | | | 0.57 | V | IF = 1 A, TJ = 125 °C; see fig. 1 | 2 |
| Maximum forward voltage drop, 1.5 A | VFM | | | 0.63 | V | IF = 1.5 A, TJ = 125 °C; see fig. 1 | 2 |
| Maximum reverse leakage current | IRM | | | 0.5 | mA | TJ = 25 °C, VR = Rated VR; see fig. 2 | 2 |
| Maximum reverse leakage current | IRM | | | 7.5 | mA | TJ = 125 °C, VR = Rated VR; see fig. 2 | 2 |
| Maximum average forward current | IF(AV) | | | 1.5 | A | 50 % duty cycle at TL = 120 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area); see fig. 4 | 1 |
| Maximum average forward current | IF(AV) | | | 1 | A | 50 % duty cycle at TL = 129 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area); see fig. 4 | 1 |
| Maximum peak one cycle non-repetitive surge current | IFSM | | | 40 | A | 5 μs sine or 3 μs rect. pulse; following any rated load condition and with rated VRRM applied; see fig. 6 | 1 |
| Maximum peak one cycle non-repetitive surge current | IFSM | | | 10 | A | 10 ms sine or 6 ms rect. pulse | 1 |
| Non-repetitive avalanche energy | EAS | | | 2 | mJ | TJ = 25 °C, IAS = 1 A, L = 4 mH | 1 |
| Maximum DC reverse voltage | VR | | | 60 | V | | 1 |
| Maximum junction and storage temperature range | TJ, TStg | -55 | | 150 | °C | | 2 |
| Maximum voltage rate of change | dV/dt | | | 10000 | V/μs | Rated VR | 2 |
| Maximum thermal resistance, junction to ambient | RthJA | | | 80 | °C/W | DC operation | 2 |
| Threshold voltage | VF(TO) | | 0.45 | | V | TJ = TJ maximum | 2 |
| Forward slope resistance | rt | | 86.8 | | mΩ | | 2 |
| Typical junction capacitance | CT | | 31 | | pF | VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz | 2 |
| Typical series inductance | LS | | 2 | | nH | Measured lead to lead 5 mm from package body | 2 |
| Repetitive avalanche current | IAR | | 1 | | A | Current decaying linearly to zero in 1 μs; frequency limited by TJ maximum; VA = 1.5 x VR | 1 |
## CAD (KiCad official)
- Symbol: `VS-10MQ060-M3`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: DO-214AC (KiCad packages3D, STEP)
- 3D model files: `vs-10mq060-m3-etched.step` / `vs-10mq060-m3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vs-10mq060-m3.step` / `vs-10mq060-m3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/vs-10mq060-m3-datasheet.pdf) (6 pp, sha256 `21cf23ea0c6773fe`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vs-10mq060-m3-datasheet.pdf)