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VS-10MQ060-M3

Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AC

VS-10MQ060-M3 from Vishay Intertech, in a DO-214AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DO-214AC
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum forward voltage drop, 1 A VFM 0.63 V IF = 1 A, TJ = 25 °C; see fig. 1 2
Maximum forward voltage drop, 1.5 A VFM 0.71 V IF = 1.5 A, TJ = 25 °C; see fig. 1 2
Maximum forward voltage drop, 1 A VFM 0.57 V IF = 1 A, TJ = 125 °C; see fig. 1 2
Maximum forward voltage drop, 1.5 A VFM 0.63 V IF = 1.5 A, TJ = 125 °C; see fig. 1 2
Maximum reverse leakage current IRM 0.5 mA TJ = 25 °C, VR = Rated VR; see fig. 2 2
Maximum reverse leakage current IRM 7.5 mA TJ = 125 °C, VR = Rated VR; see fig. 2 2
Maximum average forward current IF(AV) 1.5 A 50 % duty cycle at TL = 120 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area); see fig. 4 1
Maximum average forward current IF(AV) 1 A 50 % duty cycle at TL = 129 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area); see fig. 4 1
Maximum peak one cycle non-repetitive surge current IFSM 40 A 5 μs sine or 3 μs rect. pulse; following any rated load condition and with rated VRRM applied; see fig. 6 1
Maximum peak one cycle non-repetitive surge current IFSM 10 A 10 ms sine or 6 ms rect. pulse 1
Non-repetitive avalanche energy EAS 2 mJ TJ = 25 °C, IAS = 1 A, L = 4 mH 1
Maximum DC reverse voltage VR 60 V 1
Maximum junction and storage temperature range TJ, TStg -55 150 °C 2
Maximum voltage rate of change dV/dt 10000 V/μs Rated VR 2
Maximum thermal resistance, junction to ambient RthJA 80 °C/W DC operation 2
Threshold voltage VF(TO) 0.45 V TJ = TJ maximum 2
Forward slope resistance rt 86.8 mΩ 2
Typical junction capacitance CT 31 pF VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 2
Typical series inductance LS 2 nH Measured lead to lead 5 mm from package body 2
Repetitive avalanche current IAR 1 A Current decaying linearly to zero in 1 μs; frequency limited by TJ maximum; VA = 1.5 x VR 1

CAD (KiCad official)

  • Symbol: VS-10MQ060-M3
  • Footprint: Diode_SMD:D_SMA
  • 3D model: DO-214AC (KiCad packages3D, STEP)
  • 3D model files: vs-10mq060-m3-etched.step / vs-10mq060-m3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-10mq060-m3.step / vs-10mq060-m3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (6 pp, sha256 21cf23ea0c6773fe, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF