component
VBZM80N06
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479480481482483484485486487488489490491492493494495496497498499
{
"schema_version": 1,
"type": "component",
"slug": "vbzm80n06",
"title": "VBZM80N06",
"brief": "VBsemi Elec MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"vbzm80n06",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "VBZM80N06",
"manufacturer": "VBsemi Elec",
"package": "TO-220AB-3",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609165970712125440",
"parts": {
"symbol": "vbzm80n06.kicad_sym",
"footprint": "vbzm80n06.kicad_mod",
"model_3d": "vbzm80n06-hero.glb",
"model_3d_plain": "vbzm80n06-etched.glb",
"model_3d_step": "vbzm80n06-etched.step",
"model_3d_step_plain": "vbzm80n06.step",
"lbr": "vbzm80n06.lbr"
},
"distributor_links": {
"lcsc": "C700725"
},
"distributor_check": {
"checked_at": "2026-10-16T19:03:13Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate terminal; the gate-source voltage is rated at ±20 V (VGS), and the gate threshold voltage is 2 V to 4 V at VDS = VGS, ID = 250 µA."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain terminal; the drain-source breakdown voltage is 60 V minimum at VGS = 0 V, ID = 250 µA, with a pulsed drain current IDM of 350 A."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source terminal; the continuous source current (diode conduction) IS is rated at 70 A, which the datasheet notes is package limited."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The TO-220AB drawing on page 6 shows only pin numbers 1, 2, 3. The pin-to-function mapping G, D, S c; Drain continuous current (ID) values in the datasheet table are garbled in the text extraction, so n"
],
"pages_sent": 7,
"cost_usd": 0.0307,
"at": "2026-10-16T19:02:42"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609165970712125440",
"pages": 7,
"sha256": "219075d2b30e90bb",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "vbzm80n06.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
"checked": "2026-10-16",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "vbzm80n06-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "aeaf41a42cd65a00210711a1ffa5e8a1a3af3256f23c80191bbc88c981b9b6c5",
"checked": "2026-10-16",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "VBsemi Elec",
"Package": "TO-220AB-3",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "219075d2b30e90bb716dd449cd1a077c06a1571b896307eb73f5050784a56512",
"rows": [
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 350,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Source Current (Diode Conduction)",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 70,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche Current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 50,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Avalanche Energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 125,
"conditions": "L = 0.1 mH; Duty Cycle 1 %",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 136,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Ambient",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 15,
"max": 18,
"conditions": "t 10 sec",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Ambient",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 40,
"max": 50,
"conditions": "Steady State",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Case",
"symbol": "RthJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 0.85,
"max": 1.1,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "VDS",
"kind": "electrical",
"unit": "V",
"min": 60,
"typ": null,
"max": null,
"conditions": "VGS = 0 V, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 2,
"typ": null,
"max": 4,
"conditions": "VDS = VGS, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS = 0 V, VGS = ± 20 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS = 60 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 50,
"conditions": "VDS = 60 V, VGS = 0 V, TJ = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 250,
"conditions": "VDS = 60 V, VGS = 0 V, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-State Drain Current",
"symbol": "ID(on)",
"kind": "electrical",
"unit": "A",
"min": 60,
"typ": null,
"max": null,
"conditions": "VDS = 5 V, VGS = 10 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.01,
"conditions": "VGS = 10 V, ID = 20 A, TJ = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.015,
"conditions": "VGS = 10 V, ID = 20 A, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 47,
"max": 70,
"conditions": "VDS = 30 V, VGS = 10 V, ID = 50 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Delay Time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 10,
"max": 20,
"conditions": "VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise Time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 15,
"max": 25,
"conditions": "VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-Off Delay Time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 35,
"max": 50,
"conditions": "VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall Time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 20,
"max": 30,
"conditions": "VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Recovery Time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 45,
"max": 100,
"conditions": "IF = 20 A, di/dt = 100 A/µs",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"vbzm80n06"
],
"discovery_pitch": "VBZM80N06 (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"vbzm80n06.kicad_sym",
"vbzm80n06.kicad_mod",
"vbzm80n06.glb",
"vbzm80n06.step",
"vbzm80n06.lbr",
"docs/hero.png",
"docs/vbzm80n06-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"vbzm80n06-hero.glb",
"vbzm80n06-hero.overlay.json",
"vbzm80n06-etched.glb"
],
"visibility": {
"public": true
}
}