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VBZM80N06

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBZM80N06

VBsemi Elec · MOSFETs · TO-220AB-3

VBZM80N06 from VBsemi Elec, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±20 V (VGS), and the gate threshold voltage is 2 V to 4 V at VDS = VGS, ID = 250 µA.
2 D passive Drain terminal; the drain-source breakdown voltage is 60 V minimum at VGS = 0 V, ID = 250 µA, with a pulsed drain current IDM of 350 A.
3 S passive Source terminal; the continuous source current (diode conduction) IS is rated at 70 A, which the datasheet notes is package limited.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 350 A 1
Continuous Source Current (Diode Conduction) IS 70 A 1
Avalanche Current IAS 50 A 1
Single Avalanche Energy EAS 125 mJ L = 0.1 mH; Duty Cycle 1 % 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 15 18 °C/W t 10 sec 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Total Gate Charge Qg 47 70 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2
Turn-On Delay Time td(on) 10 20 ns VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 35 50 ns VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 20 30 ns VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Reverse Recovery Time trr 45 100 ns IF = 20 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: VBZM80N06
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: vbzm80n06-etched.step / vbzm80n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbzm80n06.step / vbzm80n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 219075d2b30e90bb, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF