# VBQA2202K

**VBsemi Elec** · MOSFETs · DFN5x6-8

VBQA2202K from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -200 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V and threshold is -1.5 to -4.0 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; drain-source voltage rated -200 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -200 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -4 | A | VGS at -10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -2 | A | VGS at -10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -6 | A | TC = 25 °C | 1 |
| Linear Derating Factor |  |  |  | 1 | W/°C | TC = 25 °C | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 300 | mJ | VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25, IAS = -11 A | 1 |
| Repetitive Avalanche Current | IAR |  |  | -3 | A | TC = 25 °C | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 10 | mJ | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 85 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | -5 | V/ns | ISD ≤ -11 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 1 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | VDS | -200 |  |  | V | VGS = 0 V, ID = -250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1.5 |  | -4 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -10 |  | 10 | μA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -100 | μA | VDS = -200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 4.1 |  |  | S | VDS = -50 V, ID = -0.5 A | 2 |
| Total Gate Charge | Qg |  |  | 50 | nC | ID = -11 A, VDS = -160 V, VGS = -10 V | 2 |
| Gate-Source Charge | Qgs |  |  | 8 | nC | ID = -11 A, VDS = -160 V, VGS = -10 V | 2 |
| Gate-Drain Charge | Qgd |  |  | 30 | nC | ID = -11 A, VDS = -160 V, VGS = -10 V | 2 |
| Gate Input Resistance | Rg | 0.3 |  | 1.7 | Ω | f = 1 MHz, open drain | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | -2 | A |  | 2 |
| Pulsed Diode Forward Current | ISM |  |  | -4 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | -5 | V | TJ = 25 °C, IS = -11 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 250 | 300 | ns | TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| VDS Temperature Coefficient | ΔVDS/ΔTJ |  | -0.2 |  | V/°C | Reference to 25 °C, ID = -1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 2 |  | Ω | VGS = -10 V, ID = -0.5 A | 2 |
| Output Capacitance | Coss |  | 370 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 81 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Rise Time | tr |  | 43 |  | ns | VDD = -100 V, ID = -11 A, Rg = 9.1, RD = 8.6 | 2 |
| Turn-Off Delay Time | td(off) |  | 39 |  | ns | VDD = -100 V, ID = -11 A, Rg = 9.1, RD = 8.6 | 2 |
| Fall Time | tf |  | 38 |  | ns | VDD = -100 V, ID = -11 A, Rg = 9.1, RD = 8.6 | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `VBQA2202K`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `vbqa2202k-etched.step` / `vbqa2202k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbqa2202k.step` / `vbqa2202k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/vbqa2202k-datasheet.pdf) (8 pp, sha256 `41d14d1967d063d2`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbqa2202k-datasheet.pdf)