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VBQA2202K

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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VBQA2202K

VBsemi Elec · MOSFETs · DFN5x6-8

VBQA2202K from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; drain-source voltage rated -200 V.
2 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V and threshold is -1.5 to -4.0 V.
5 D passive Drain of the P-channel MOSFET; drain-source voltage rated -200 V.
6 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -200 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID -4 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -2 A VGS at -10 V, TC = 100 °C 1
Pulsed Drain Current IDM -6 A TC = 25 °C 1
Linear Derating Factor 1 W/°C TC = 25 °C 1
Single Pulse Avalanche Energy EAS 300 mJ VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25, IAS = -11 A 1
Repetitive Avalanche Current IAR -3 A TC = 25 °C 1
Repetitive Avalanche Energy EAR 10 mJ TC = 25 °C 1
Maximum Power Dissipation PD 85 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -5 V/ns ISD ≤ -11 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C for 10 s, 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Breakdown Voltage VDS -200 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -4 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -10 10 μA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS = -200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -500 μA VDS = -160 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 4.1 S VDS = -50 V, ID = -0.5 A 2
Total Gate Charge Qg 50 nC ID = -11 A, VDS = -160 V, VGS = -10 V 2
Gate-Source Charge Qgs 8 nC ID = -11 A, VDS = -160 V, VGS = -10 V 2
Gate-Drain Charge Qgd 30 nC ID = -11 A, VDS = -160 V, VGS = -10 V 2
Gate Input Resistance Rg 0.3 1.7 Ω f = 1 MHz, open drain 2
Continuous Source-Drain Diode Current IS -2 A 2
Pulsed Diode Forward Current ISM -4 A 2
Body Diode Voltage VSD -5 V TJ = 25 °C, IS = -11 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 250 300 ns TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
VDS Temperature Coefficient ΔVDS/ΔTJ -0.2 V/°C Reference to 25 °C, ID = -1 mA 2
Drain-Source On-State Resistance RDS(on) 2 Ω VGS = -10 V, ID = -0.5 A 2
Output Capacitance Coss 370 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 81 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Rise Time tr 43 ns VDD = -100 V, ID = -11 A, Rg = 9.1, RD = 8.6 2
Turn-Off Delay Time td(off) 39 ns VDD = -100 V, ID = -11 A, Rg = 9.1, RD = 8.6 2
Fall Time tf 38 ns VDD = -100 V, ID = -11 A, Rg = 9.1, RD = 8.6 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2

CAD (KiCad official)

  • Symbol: VBQA2202K
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: vbqa2202k-etched.step / vbqa2202k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbqa2202k.step / vbqa2202k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 41d14d1967d063d2, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF