component

VBQA2157N

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsvbqa2157nfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 10d ago
viewers vbqa2157n: viewers · Ray 10d ago
package.json Publish 0.1.0 · Ray 10d ago
page.json Set visibility: public · Ray 10d ago
README.md Publish 0.1.0 · Ray 10d ago
vbqa2157n-etched.glb Publish 0.1.0 · Ray 10d ago
vbqa2157n-etched.step vbqa2157n: factory component page (tier=lcsc) · Ray 10d ago
vbqa2157n-hero.glb vbqa2157n: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
vbqa2157n-hero.overlay.json Publish 0.1.0 · Ray 10d ago
vbqa2157n.glb Publish 0.1.0 · Ray 10d ago
vbqa2157n.kicad_mod Publish 0.1.0 · Ray 10d ago
vbqa2157n.kicad_sym Publish 0.1.0 · Ray 10d ago
vbqa2157n.lbr Publish 0.1.0 · Ray 10d ago
vbqa2157n.step Publish 0.1.0 · Ray 10d ago

VBQA2157N

VBsemi Elec · MOSFETs · DFN5x6-8

VBQA2157N from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drain-source voltage is rated at -150 V.
2 S passive Source of the P-channel MOSFET, tied to the same net as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to the same net as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; the gate-source voltage is rated at ±20 V.
5 D passive Drain of the P-channel MOSFET; continuous drain current is -22 A at TC = 25 °C.
6 D passive Drain of the P-channel MOSFET, tied to the same net as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied to the same net as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied to the same net as pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -22 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID -18 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID -20 A TJ = 150 °C; TA = 25 °C 1
Continuous Drain Current ID -18.1 A TJ = 150 °C; TA = 70 °C; surface mounted on 1 in x 1 in FR4 board 1
Pulsed Drain Current IDM -45 A 1
Avalanche Current Pulse IAS 12 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 12 mJ 1
Continuous Source-Drain Diode Current IS 7.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.4 A TA = 25 °C; surface mounted on 1 in x 1 in FR4 board 1
Maximum Power Dissipation PD 10 W TC = 25 °C 1
Maximum Power Dissipation PD 7 W TC = 70 °C 1
Maximum Power Dissipation PD 1.3 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C; surface mounted on 1 in x 1 in FR4 board 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 33 40 °C/W Steady state; surface mounted on 1 in x 1 in FR4 board 1
Maximum Junction-to-Case RthJC 0.98 1.2 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -150 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -120 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = -10 V, ID = -5 A 2
Drain-Source On-State Resistance RDS(on) 0.07 Ω VGS = -4.5 V, ID = -5 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Total Gate Charge Qg 76 115 nC VDS = -30 V, VGS = -10 V, ID = -5 A 2
Total Gate Charge Qg 38 60 nC VDS = -30 V, VGS = -4.5 V, ID = -5 A 2
Body Diode Voltage VSD -1 -1.5 V IS = -3 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = -5 A, di/dt = 10 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = -5 A, di/dt = 10 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient VDS/TJ 68 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 mV/°C 2

CAD (KiCad official)

  • Symbol: VBQA2157N
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: vbqa2157n-etched.step / vbqa2157n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbqa2157n.step / vbqa2157n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 c1e950b9e96a377c, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF