# VBQA1102N

**VBsemi Elec** · MOSFETs · DFN5x6-8

VBQA1102N from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked with a dot). |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal; VGS is rated at ±20 V maximum. |
| 5 | D | passive | Drain terminal; VDS is rated at 100 V maximum. |
| 6 | D | passive | Drain terminal; VDS is rated at 100 V maximum. |
| 7 | D | passive | Drain terminal; VDS is rated at 100 V maximum. |
| 8 | D | passive | Drain terminal; VDS is rated at 100 V maximum. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain-source voltage | VDS |  |  | 100 | V |  | 1 |
| Continuous drain current | ID |  |  | 30 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 19 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Continuous drain current | ID |  |  | 10 | A | TJ = 150 °C; TA = 25 °C; notes b, c | 1 |
| Continuous drain current | ID |  |  | 8.5 | A | TJ = 150 °C; TA = 70 °C; notes b, c | 1 |
| Pulsed drain current | IDM |  |  | 75 | A | t = 100 μs | 1 |
| Continuous source-drain diode current | IS |  |  | 56 | A | TC = 25 °C | 1 |
| Continuous source-drain diode current | IS |  |  | 4.5 | A | TA = 25 °C; notes b, c | 1 |
| Single pulse avalanche current | IAS |  |  | 20 | A | L = 0.1 mH | 1 |
| Single pulse avalanche energy | EAS |  |  | 20 | mJ |  | 1 |
| Maximum power dissipation | PD |  |  | 60 | W | TC = 25 °C | 1 |
| Maximum power dissipation | PD |  |  | 40 | W | TC = 70 °C | 1 |
| Maximum power dissipation | PD |  |  | 5 | W | TA = 25 °C; notes b, c | 1 |
| Maximum power dissipation | PD |  |  | 3.2 | W | TA = 70 °C; notes b, c | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 260 | °C | note c (t = 10 s) | 1 |
| Maximum junction-to-ambient thermal resistance | RthJA |  | 20 | 25 | °C/W | t ≤ 10 s; note b | 1 |
| Drain-source breakdown voltage | VDS | 100 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 3 |  | 5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS = 100 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 15 | μA | VDS = 100 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-state drain current | ID(on) | 40 |  |  | A | VDS ≥ 10 V, VGS = 10 V | 2 |
| Gate resistance | Rg | 0.2 | 0.76 | 1.4 | Ω | f = 1 MHz | 2 |
| Turn-on delay time (VGEN = 10 V) | td(on) |  | 12 | 24 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1 | 2 |
| Rise time (VGEN = 10 V) | tr |  | 5 | 10 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-off delay time (VGEN = 10 V) | td(off) |  | 19 | 38 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1 | 2 |
| Fall time (VGEN = 10 V) | tf |  | 5 | 10 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-on delay time (VGEN = 7.5 V) | td(on) |  | 15 | 30 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 7.5 V, Rg = 1 | 2 |
| Rise time (VGEN = 7.5 V) | tr |  | 6 | 12 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 7.5 V, Rg = 1 | 2 |
| Turn-off delay time (VGEN = 7.5 V) | td(off) |  | 19 | 38 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 7.5 V, Rg = 1 | 2 |
| Fall time (VGEN = 7.5 V) | tf |  | 5 | 10 | ns | VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 7.5 V, Rg = 1 | 2 |
| Continuous source-drain diode current | IS |  |  | 56.8 | A | TC = 25 °C | 2 |
| Pulse diode forward current | ISM |  |  | 80 | A |  | 2 |
| Body diode voltage | VSD |  | 0.78 | 1.1 | V | IS = 5 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 43 | 86 | ns | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
| Body diode reverse recovery charge | Qrr |  | 72 | 144 | nC | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `VBQA1102N`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `vbqa1102n-etched.step` / `vbqa1102n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbqa1102n.step` / `vbqa1102n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609160700011307008) (8 pp, sha256 `c64c8457b5f4b0df`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbqa1102n-datasheet.pdf)