component
VBE2309
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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VBE2309
VBsemi Elec · MOSFETs · TO-252
VBE2309 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold -1 to -3 V at ID = -250 µA. |
| 2 | D | passive | Drain, also the tab; VDS rated -30 V and continuous drain current -70 A (package limited) at TC = 25 °C. |
| 3 | S | passive | Source; continuous body-diode current -70 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -70 | A | TJ = 175 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -58 | A | TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | -240 | A | 1 | |||
| Avalanche Current | IAR | -60 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 180 | mJ | L = 0.1 mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = - 30 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = - 30 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.009 | Ω | VGS = - 10 V, ID = - 30 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.012 | Ω | VGS = - 10 V, ID = - 30 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = - 10 V, ID = - 30 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = - 4.5 V, ID = - 20 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = - 15 V, ID = - 75 A | 2 | ||
| Input Capacitance | Ciss | 4000 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 1565 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 715 | pF | 2 | |||
| Total Gate Charge | Qg | 160 | 240 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | 2 | |
| Gate-Source Charge | Qgs | 32 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 30 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 25 | 40 | ns | VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 | 2 | |
| Rise Time | tr | 225 | 360 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 150 | 240 | ns | 2 | ||
| Fall Time | tf | 210 | 340 | ns | 2 | ||
| Continuous Current (source-drain diode) | IS | -70 | A | 2 | |||
| Pulsed Current (source-drain diode) | ISM | -240 | A | 2 | |||
| Forward Voltage | VSD | -1.2 | -1.5 | V | IF = - 75 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 55 | 100 | ns | IF = - 75 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 2.5 | 5 | A | 2 | ||
| Reverse Recovery Charge | Qrr | 0.07 | 0.25 | µC | 2 |
CAD (KiCad official)
- Symbol:
VBE2309 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vbe2309-etched.step/vbe2309-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbe2309.step/vbe2309.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
d23cd2aeada52414, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VBE2309
**VBsemi Elec** · MOSFETs · TO-252
VBE2309 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold -1 to -3 V at ID = -250 µA. |
| 2 | D | passive | Drain, also the tab; VDS rated -30 V and continuous drain current -70 A (package limited) at TC = 25 °C. |
| 3 | S | passive | Source; continuous body-diode current -70 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -70 | | | A | TJ = 175 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID | -58 | | | A | TC = 125 °C | 1 |
| Pulsed Drain Current | IDM | -240 | | | A | | 1 |
| Avalanche Current | IAR | -60 | | | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 180 | mJ | L = 0.1 mH | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -50 | µA | VDS = - 30 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -250 | µA | VDS = - 30 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | -120 | | | A | VDS = - 5 V, VGS = - 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.009 | Ω | VGS = - 10 V, ID = - 30 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.012 | Ω | VGS = - 10 V, ID = - 30 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.013 | Ω | VGS = - 10 V, ID = - 30 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.011 | Ω | VGS = - 4.5 V, ID = - 20 A | 2 |
| Forward Transconductance | gfs | | 20 | | S | VDS = - 15 V, ID = - 75 A | 2 |
| Input Capacitance | Ciss | | 4000 | | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 1565 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 715 | | pF | | 2 |
| Total Gate Charge | Qg | | 160 | 240 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | 2 |
| Gate-Source Charge | Qgs | | 32 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 30 | | nC | | 2 |
| Turn-On Delay Time | td(on) | | 25 | 40 | ns | VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 | 2 |
| Rise Time | tr | | 225 | 360 | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 150 | 240 | ns | | 2 |
| Fall Time | tf | | 210 | 340 | ns | | 2 |
| Continuous Current (source-drain diode) | IS | -70 | | | A | | 2 |
| Pulsed Current (source-drain diode) | ISM | -240 | | | A | | 2 |
| Forward Voltage | VSD | | -1.2 | -1.5 | V | IF = - 75 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr | | 55 | 100 | ns | IF = - 75 A, dI/dt = 100 A/µs | 2 |
| Peak Reverse Recovery Current | IRM(REC) | | 2.5 | 5 | A | | 2 |
| Reverse Recovery Charge | Qrr | | 0.07 | 0.25 | µC | | 2 |
## CAD (KiCad official)
- Symbol: `VBE2309`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `vbe2309-etched.step` / `vbe2309-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbe2309.step` / `vbe2309.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885610198650880) (8 pp, sha256 `d23cd2aeada52414`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vbe2309-datasheet.pdf)