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VBE2309

Public Made by Adom

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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VBE2309

VBsemi Elec · MOSFETs · TO-252

VBE2309 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold -1 to -3 V at ID = -250 µA.
2 D passive Drain, also the tab; VDS rated -30 V and continuous drain current -70 A (package limited) at TC = 25 °C.
3 S passive Source; continuous body-diode current -70 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -70 A TJ = 175 °C; TC = 25 °C 1
Continuous Drain Current ID -58 A TC = 125 °C 1
Pulsed Drain Current IDM -240 A 1
Avalanche Current IAR -60 A 1
Repetitive Avalanche Energy EAR 180 mJ L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 30 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = - 30 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) -120 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.009 Ω VGS = - 10 V, ID = - 30 A 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = - 10 V, ID = - 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = - 10 V, ID = - 30 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = - 4.5 V, ID = - 20 A 2
Forward Transconductance gfs 20 S VDS = - 15 V, ID = - 75 A 2
Input Capacitance Ciss 4000 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Output Capacitance Coss 1565 pF 2
Reverse Transfer Capacitance Crss 715 pF 2
Total Gate Charge Qg 160 240 nC VDS = - 15 V, VGS = - 10 V, ID = - 75 A 2
Gate-Source Charge Qgs 32 nC 2
Gate-Drain Charge Qgd 30 nC 2
Turn-On Delay Time td(on) 25 40 ns VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 2
Rise Time tr 225 360 ns 2
Turn-Off Delay Time td(off) 150 240 ns 2
Fall Time tf 210 340 ns 2
Continuous Current (source-drain diode) IS -70 A 2
Pulsed Current (source-drain diode) ISM -240 A 2
Forward Voltage VSD -1.2 -1.5 V IF = - 75 A, VGS = 0 V 2
Reverse Recovery Time trr 55 100 ns IF = - 75 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.5 5 A 2
Reverse Recovery Charge Qrr 0.07 0.25 µC 2

CAD (KiCad official)

  • Symbol: VBE2309
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: vbe2309-etched.step / vbe2309-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbe2309.step / vbe2309.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 d23cd2aeada52414, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF