component
VBA1402
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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VBA1402
VBsemi Elec · MOSFETs · SO-8
VBA1402 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet top view shows pins 1-3 as source, with continuous source-drain diode current of 7.0 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied in parallel with the other source pins (1-3 per the top view). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied in parallel with the other source pins (1-3 per the top view). |
| 4 | G | input | Gate terminal with an absolute maximum gate-source voltage of ±20 V and a threshold voltage of 1.0 V min to 2.5 V max at 250 µA. |
| 5 | D | passive | Drain terminal with a drain-source voltage rating of 40 V, shared with pins 6-8. |
| 6 | D | passive | Drain terminal with a drain-source voltage rating of 40 V, shared with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal with a drain-source voltage rating of 40 V, shared with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal with a drain-source voltage rating of 40 V and continuous drain current of 36 A at TC = 25 °C, shared with pins 5-7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 36 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 26 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 24 | A | TA = 25 °C, TJ = 150 °C (b, c) | 1 | ||
| Continuous Drain Current | ID | 19 | A | TA = 70 °C, TJ = 150 °C (b, c) | 1 | ||
| Pulsed Drain Current | IDM | 70 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 7 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 3.1 | A | TA = 25 °C (b, c) | 1 | ||
| Single Pulse Avalanche Current | IAS | 40 | A | L = 0.1 mH | 1 | ||
| Avalanche Energy | EAS | 80 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 7.8 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | TA = 25 °C (b, c) | 1 | ||
| Maximum Power Dissipation | PD | 2.2 | W | TA = 70 °C (b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 29 | 35 | °C/W | t ≤ 10 s (b, d) | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 13 | 16 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Total Gate Charge | Qg | 70 | 105 | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 | |
| Total Gate Charge | Qg | 32.5 | 49 | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 | |
| Gate Resistance | Rg | 0.3 | 1.25 | 2.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 25 | 50 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 70 | 120 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 51 | 90 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 35 | 60 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 9 | 18 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 60 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 14 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.71 | 1.1 | V | IS = 3 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 33 | 65 | ns | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 29 | 56 | nC | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Continuous Source-Drain Diode Current | IS | 7 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 70 | A | 2 | |||
| Drain-Source On-State Resistance | RDS(on) | 0.002 | Ω | VGS = 10 V, ID = 15 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.003 | Ω | VGS = 4.5 V, ID = 10 A | 2 | ||
| Forward Transconductance | gfs | 75 | S | VDS = 15 V, ID = 15 A | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 45 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -5.6 | mV/°C | 2 | |||
| Input Capacitance | Ciss | 4230 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 570 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 220 | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 9.7 | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 | ||
| Gate-Drain Charge | Qgd | 8.6 | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 | ||
| Reverse Recovery Fall Time | ta | 17 | ns | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Reverse Recovery Rise Time | tb | 16 | ns | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
VBA1402 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
vba1402-etched.step/vba1402-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vba1402.step/vba1402.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
29c514f60c66f34c, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VBA1402
**VBsemi Elec** · MOSFETs · SO-8
VBA1402 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet top view shows pins 1-3 as source, with continuous source-drain diode current of 7.0 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied in parallel with the other source pins (1-3 per the top view). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied in parallel with the other source pins (1-3 per the top view). |
| 4 | G | input | Gate terminal with an absolute maximum gate-source voltage of ±20 V and a threshold voltage of 1.0 V min to 2.5 V max at 250 µA. |
| 5 | D | passive | Drain terminal with a drain-source voltage rating of 40 V, shared with pins 6-8. |
| 6 | D | passive | Drain terminal with a drain-source voltage rating of 40 V, shared with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal with a drain-source voltage rating of 40 V, shared with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal with a drain-source voltage rating of 40 V and continuous drain current of 36 A at TC = 25 °C, shared with pins 5-7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | 36 | A | TC = 25 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | | | 26 | A | TC = 70 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | | | 24 | A | TA = 25 °C, TJ = 150 °C (b, c) | 1 |
| Continuous Drain Current | ID | | | 19 | A | TA = 70 °C, TJ = 150 °C (b, c) | 1 |
| Pulsed Drain Current | IDM | | | 70 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 7 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 3.1 | A | TA = 25 °C (b, c) | 1 |
| Single Pulse Avalanche Current | IAS | | | 40 | A | L = 0.1 mH | 1 |
| Avalanche Energy | EAS | | | 80 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 7.8 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 5 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.5 | W | TA = 25 °C (b, c) | 1 |
| Maximum Power Dissipation | PD | | | 2.2 | W | TA = 70 °C (b, c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 29 | 35 | °C/W | t ≤ 10 s (b, d) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 13 | 16 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | 40 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 30 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Total Gate Charge | Qg | | 70 | 105 | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 |
| Total Gate Charge | Qg | | 32.5 | 49 | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 |
| Gate Resistance | Rg | 0.3 | 1.25 | 2.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 25 | 50 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 70 | 120 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 51 | 90 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 35 | 60 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 9 | 18 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 35 | 60 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 7 | 14 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD | | 0.71 | 1.1 | V | IS = 3 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 33 | 65 | ns | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 29 | 56 | nC | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Continuous Source-Drain Diode Current | IS | | | 7 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 70 | A | | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.002 | | Ω | VGS = 10 V, ID = 15 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.003 | | Ω | VGS = 4.5 V, ID = 10 A | 2 |
| Forward Transconductance | gfs | | 75 | | S | VDS = 15 V, ID = 15 A | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 45 | | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | | -5.6 | | mV/°C | | 2 |
| Input Capacitance | Ciss | | 4230 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 570 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 220 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 9.7 | | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 |
| Gate-Drain Charge | Qgd | | 8.6 | | nC | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 2 |
| Reverse Recovery Fall Time | ta | | 17 | | ns | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Rise Time | tb | | 16 | | ns | IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
## CAD (KiCad official)
- Symbol: `VBA1402`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `vba1402-etched.step` / `vba1402-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vba1402.step` / `vba1402.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/vba1402-datasheet.pdf) (7 pp, sha256 `29c514f60c66f34c`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vba1402-datasheet.pdf)