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VBA1402

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBA1402

VBsemi Elec · MOSFETs · SO-8

VBA1402 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet top view shows pins 1-3 as source, with continuous source-drain diode current of 7.0 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET, tied in parallel with the other source pins (1-3 per the top view).
3 S passive Source terminal of the N-channel MOSFET, tied in parallel with the other source pins (1-3 per the top view).
4 G input Gate terminal with an absolute maximum gate-source voltage of ±20 V and a threshold voltage of 1.0 V min to 2.5 V max at 250 µA.
5 D passive Drain terminal with a drain-source voltage rating of 40 V, shared with pins 6-8.
6 D passive Drain terminal with a drain-source voltage rating of 40 V, shared with pins 5, 7 and 8.
7 D passive Drain terminal with a drain-source voltage rating of 40 V, shared with pins 5, 6 and 8.
8 D passive Drain terminal with a drain-source voltage rating of 40 V and continuous drain current of 36 A at TC = 25 °C, shared with pins 5-7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 36 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 26 A TC = 70 °C, TJ = 150 °C 1
Continuous Drain Current ID 24 A TA = 25 °C, TJ = 150 °C (b, c) 1
Continuous Drain Current ID 19 A TA = 70 °C, TJ = 150 °C (b, c) 1
Pulsed Drain Current IDM 70 A 1
Continuous Source-Drain Diode Current IS 7 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 3.1 A TA = 25 °C (b, c) 1
Single Pulse Avalanche Current IAS 40 A L = 0.1 mH 1
Avalanche Energy EAS 80 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 7.8 W TC = 25 °C 1
Maximum Power Dissipation PD 5 W TC = 70 °C 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C (b, c) 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C (b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 29 35 °C/W t ≤ 10 s (b, d) 1
Maximum Junction-to-Foot (Drain) RthJF 13 16 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Total Gate Charge Qg 70 105 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Total Gate Charge Qg 32.5 49 nC VDS = 20 V, VGS = 4.5 V, ID = 20 A 2
Gate Resistance Rg 0.3 1.25 2.5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 25 50 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 70 120 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 51 90 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 35 60 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 10 20 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 9 18 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 35 60 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.71 1.1 V IS = 3 A 2
Body Diode Reverse Recovery Time trr 33 65 ns IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 29 56 nC IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2
Continuous Source-Drain Diode Current IS 7 A TC = 25 °C 2
Pulse Diode Forward Current ISM 70 A 2
Drain-Source On-State Resistance RDS(on) 0.002 Ω VGS = 10 V, ID = 15 A 2
Drain-Source On-State Resistance RDS(on) 0.003 Ω VGS = 4.5 V, ID = 10 A 2
Forward Transconductance gfs 75 S VDS = 15 V, ID = 15 A 2
VDS Temperature Coefficient ΔVDS/TJ 45 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5.6 mV/°C 2
Input Capacitance Ciss 4230 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 570 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 220 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 9.7 nC VDS = 20 V, VGS = 4.5 V, ID = 20 A 2
Gate-Drain Charge Qgd 8.6 nC VDS = 20 V, VGS = 4.5 V, ID = 20 A 2
Reverse Recovery Fall Time ta 17 ns IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 16 ns IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: VBA1402
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba1402-etched.step / vba1402-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba1402.step / vba1402.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 29c514f60c66f34c, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF