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UTM4052G-S08-R&30V-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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UTM4052G-S08-R&30V-VB
VBsemi Elec · MOSFETs · SO-8
UTM4052G-S08-R&30V-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET (channel 1), rated within the N-channel 30 V drain-source limit. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET (channel 1), with gate-source voltage rated at ±20 V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET (channel 2), rated within the P-channel -30 V drain-source limit. |
| 4 | G2 | input | Gate terminal of the P-channel MOSFET (channel 2), with gate-source voltage rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2), connected internally with pin 6. |
| 6 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2), connected internally with pin 5. |
| 7 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1), connected internally with pin 8. |
| 8 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1), connected internally with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage N-Channel | V(BR)DSS | 30 | V | VGS = 0 V, ID = 250 µA N-Ch | 2 | ||
| Drain-Source Breakdown Voltage P-Channel | V(BR)DSS | -30 | V | VGS = 0 V, ID = -250 µA P-Ch | 2 | ||
| Gate Threshold Voltage N-Channel | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA N-Ch | 2 | |
| Gate Threshold Voltage P-Channel | VGS(th) | -2 | -1 | V | VDS = VGS, ID = -250 µA P-Ch | 2 | |
| Gate-Body Leakage N-Channel | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V N-Ch | 2 | |
| Gate-Body Leakage P-Channel | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V P-Ch | 2 | |
| Zero Gate Voltage Drain Current N-Channel | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Channel | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V P-Ch | 2 | ||
| Zero Gate Voltage Drain Current N-Channel TJ=55 °C | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Channel TJ=55 °C | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C P-Ch | 2 | ||
| On-State Drain Current N-Channel | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V N-Ch | 2 | ||
| On-State Drain Current P-Channel | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V P-Ch | 2 | ||
| Drain-Source On-State Resistance P-Channel VGS=-10 V | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Channel VGS=8 V | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Channel VGS=-8 V | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Channel VGS=4.5 V | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Channel VGS=-4.5 V | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A P-Ch | 2 | ||
| Total Gate Charge N-Channel | Qg | 6 | 10 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch | 2 | |
| Total Gate Charge P-Channel | Qg | 41.5 | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A P-Ch | 2 | |
| Turn-On Delay Time N-Channel VGEN=10 V | td(on) | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel | 3 | |
| Turn-On Delay Time P-Channel VGEN=-10 V | td(on) | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel | 3 | |
| Rise Time N-Channel VGEN=10 V | tr | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel | 3 | |
| Rise Time P-Channel VGEN=-10 V | tr | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel | 3 | |
| Fall Time N-Channel VGEN=10 V | tf | 5 | 9 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel | 3 | |
| Fall Time P-Channel VGEN=-10 V | tf | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel | 3 | |
| Continuous Source-Drain Diode Current N-Channel | IS | 2.6 | A | TC = 25 °C N-Ch | 3 | ||
| Continuous Source-Drain Diode Current P-Channel | IS | -2.6 | A | TC = 25 °C P-Ch | 3 | ||
| Body Diode Voltage N-Channel | VSD | 0.81 | 1.2 | V | IS = 5.4 A N-Ch | 3 | |
| Body Diode Voltage P-Channel | VSD | -1.2 | -0.77 | V | IS = -2 A P-Ch | 3 | |
| Drain-Source Voltage N-Channel | VDS | 30 | V | N-Channel | 1 | ||
| Drain-Source Voltage P-Channel | VDS | -30 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current TC=25 °C N-Channel | ID | 8 | A | TC = 25 °C, TJ = 150 °C N-Channel | 1 | ||
| Continuous Drain Current TC=25 °C P-Channel | ID | -8 | A | TC = 25 °C, TJ = 150 °C P-Channel | 1 | ||
| Continuous Drain Current TC=70 °C N-Channel | ID | 6.8 | A | TC = 70 °C N-Channel | 1 | ||
| Continuous Drain Current TC=70 °C P-Channel | ID | -6.8 | A | TC = 70 °C P-Channel | 1 | ||
| Continuous Drain Current TA=25 °C N-Channel | ID | 6.8 | A | TA = 25 °C N-Channel | 1 | ||
| Continuous Drain Current TA=25 °C P-Channel | ID | -6.6 | A | TA = 25 °C P-Channel | 1 | ||
| Continuous Drain Current TA=70 °C N-Channel | ID | 5.4 | A | TA = 70 °C N-Channel | 1 | ||
| Continuous Drain Current TA=70 °C P-Channel | ID | -5.3 | A | TA = 70 °C P-Channel | 1 | ||
| Pulsed Drain Current N-Channel | IDM | 40 | A | 10 µs pulse width N-Channel | 1 | ||
| Pulsed Drain Current P-Channel | IDM | -40 | A | 10 µs pulse width P-Channel | 1 | ||
| Source-Drain Diode Current TA=25 °C N-Channel | IS | 1.6 | A | TA = 25 °C N-Channel | 1 | ||
| Source-Drain Diode Current TA=25 °C P-Channel | IS | -1.6 | A | TA = 25 °C P-Channel | 1 | ||
| Pulsed Source-Drain Current N-Channel | ISM | 40 | A | N-Channel | 1 | ||
| Pulsed Source-Drain Current P-Channel | ISM | -40 | A | P-Channel | 1 | ||
| Single Pulse Avalanche Current N-Channel | IAS | 10 | A | L = 0.1 mH N-Channel | 1 | ||
| Single Pulse Avalanche Current P-Channel | IAS | 20 | A | L = 0.1 mH P-Channel | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | L = 0.1 mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Power Dissipation TA=25 °C | PD | 2 | W | TA = 25 °C, t ≤ 10 s, surface mounted | 1 | ||
| Maximum Power Dissipation TA=70 °C | PD | 1.28 | W | TA = 70 °C, t ≤ 10 s, surface mounted | 1 | ||
| Maximum Junction-to-Ambient N-Channel t≤10 s | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s N-Channel | 1 | |
| Maximum Junction-to-Ambient P-Channel t≤10 s | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s P-Channel | 1 | |
| Maximum Junction-to-Foot (Drain) Steady State N-Channel | RthJF | 30 | 40 | °C/W | Steady State N-Channel | 1 | |
| Maximum Junction-to-Foot (Drain) Steady State P-Channel | RthJF | 29 | 38 | °C/W | Steady State P-Channel | 1 |
CAD (KiCad official)
- Symbol:
UTM4052G-S08-R&30V-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
utm4052g-s08-r-30v-vb-etched.step/utm4052g-s08-r-30v-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);utm4052g-s08-r-30v-vb.step/utm4052g-s08-r-30v-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
eab222f172106608, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UTM4052G-S08-R&30V-VB
**VBsemi Elec** · MOSFETs · SO-8
UTM4052G-S08-R&30V-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET (channel 1), rated within the N-channel 30 V drain-source limit. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET (channel 1), with gate-source voltage rated at ±20 V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET (channel 2), rated within the P-channel -30 V drain-source limit. |
| 4 | G2 | input | Gate terminal of the P-channel MOSFET (channel 2), with gate-source voltage rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2), connected internally with pin 6. |
| 6 | D2 | passive | Drain terminal of the P-channel MOSFET (channel 2), connected internally with pin 5. |
| 7 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1), connected internally with pin 8. |
| 8 | D1 | passive | Drain terminal of the N-channel MOSFET (channel 1), connected internally with pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage N-Channel | V(BR)DSS | 30 | | | V | VGS = 0 V, ID = 250 µA N-Ch | 2 |
| Drain-Source Breakdown Voltage P-Channel | V(BR)DSS | -30 | | | V | VGS = 0 V, ID = -250 µA P-Ch | 2 |
| Gate Threshold Voltage N-Channel | VGS(th) | 1 | | 2 | V | VDS = VGS, ID = 250 µA N-Ch | 2 |
| Gate Threshold Voltage P-Channel | VGS(th) | -2 | | -1 | V | VDS = VGS, ID = -250 µA P-Ch | 2 |
| Gate-Body Leakage N-Channel | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V N-Ch | 2 |
| Gate-Body Leakage P-Channel | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V P-Ch | 2 |
| Zero Gate Voltage Drain Current N-Channel | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V N-Ch | 2 |
| Zero Gate Voltage Drain Current P-Channel | IDSS | -1 | | | µA | VDS = -30 V, VGS = 0 V P-Ch | 2 |
| Zero Gate Voltage Drain Current N-Channel TJ=55 °C | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch | 2 |
| Zero Gate Voltage Drain Current P-Channel TJ=55 °C | IDSS | -10 | | | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C P-Ch | 2 |
| On-State Drain Current N-Channel | ID(on) | 20 | | | A | VDS = 5 V, VGS = 10 V N-Ch | 2 |
| On-State Drain Current P-Channel | ID(on) | -20 | | | A | VDS = -5 V, VGS = -10 V P-Ch | 2 |
| Drain-Source On-State Resistance P-Channel VGS=-10 V | RDS(on) | | | 0.04 | Ω | VGS = -10 V, ID = -8 A P-Ch | 2 |
| Drain-Source On-State Resistance N-Channel VGS=8 V | RDS(on) | | | 0.02 | Ω | VGS = 8 V, ID = 6.7 A N-Ch | 2 |
| Drain-Source On-State Resistance P-Channel VGS=-8 V | RDS(on) | | | 0.044 | Ω | VGS = -8 V, ID = -6.5 A P-Ch | 2 |
| Drain-Source On-State Resistance N-Channel VGS=4.5 V | RDS(on) | | | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A N-Ch | 2 |
| Drain-Source On-State Resistance P-Channel VGS=-4.5 V | RDS(on) | | | 0.05 | Ω | VGS = -4.5 V, ID = -5 A P-Ch | 2 |
| Total Gate Charge N-Channel | Qg | | 6 | 10 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch | 2 |
| Total Gate Charge P-Channel | Qg | | 41.5 | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A P-Ch | 2 |
| Turn-On Delay Time N-Channel VGEN=10 V | td(on) | | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel | 3 |
| Turn-On Delay Time P-Channel VGEN=-10 V | td(on) | | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel | 3 |
| Rise Time N-Channel VGEN=10 V | tr | | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel | 3 |
| Rise Time P-Channel VGEN=-10 V | tr | | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel | 3 |
| Fall Time N-Channel VGEN=10 V | tf | | 5 | 9 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel | 3 |
| Fall Time P-Channel VGEN=-10 V | tf | | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel | 3 |
| Continuous Source-Drain Diode Current N-Channel | IS | | | 2.6 | A | TC = 25 °C N-Ch | 3 |
| Continuous Source-Drain Diode Current P-Channel | IS | -2.6 | | | A | TC = 25 °C P-Ch | 3 |
| Body Diode Voltage N-Channel | VSD | | 0.81 | 1.2 | V | IS = 5.4 A N-Ch | 3 |
| Body Diode Voltage P-Channel | VSD | -1.2 | -0.77 | | V | IS = -2 A P-Ch | 3 |
| Drain-Source Voltage N-Channel | VDS | | | 30 | V | N-Channel | 1 |
| Drain-Source Voltage P-Channel | VDS | -30 | | | V | P-Channel | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current TC=25 °C N-Channel | ID | | | 8 | A | TC = 25 °C, TJ = 150 °C N-Channel | 1 |
| Continuous Drain Current TC=25 °C P-Channel | ID | -8 | | | A | TC = 25 °C, TJ = 150 °C P-Channel | 1 |
| Continuous Drain Current TC=70 °C N-Channel | ID | | | 6.8 | A | TC = 70 °C N-Channel | 1 |
| Continuous Drain Current TC=70 °C P-Channel | ID | -6.8 | | | A | TC = 70 °C P-Channel | 1 |
| Continuous Drain Current TA=25 °C N-Channel | ID | | | 6.8 | A | TA = 25 °C N-Channel | 1 |
| Continuous Drain Current TA=25 °C P-Channel | ID | -6.6 | | | A | TA = 25 °C P-Channel | 1 |
| Continuous Drain Current TA=70 °C N-Channel | ID | | | 5.4 | A | TA = 70 °C N-Channel | 1 |
| Continuous Drain Current TA=70 °C P-Channel | ID | -5.3 | | | A | TA = 70 °C P-Channel | 1 |
| Pulsed Drain Current N-Channel | IDM | | | 40 | A | 10 µs pulse width N-Channel | 1 |
| Pulsed Drain Current P-Channel | IDM | -40 | | | A | 10 µs pulse width P-Channel | 1 |
| Source-Drain Diode Current TA=25 °C N-Channel | IS | | | 1.6 | A | TA = 25 °C N-Channel | 1 |
| Source-Drain Diode Current TA=25 °C P-Channel | IS | -1.6 | | | A | TA = 25 °C P-Channel | 1 |
| Pulsed Source-Drain Current N-Channel | ISM | | | 40 | A | N-Channel | 1 |
| Pulsed Source-Drain Current P-Channel | ISM | -40 | | | A | P-Channel | 1 |
| Single Pulse Avalanche Current N-Channel | IAS | | | 10 | A | L = 0.1 mH N-Channel | 1 |
| Single Pulse Avalanche Current P-Channel | IAS | | | 20 | A | L = 0.1 mH P-Channel | 1 |
| Single Pulse Avalanche Energy | EAS | | | 520 | mJ | L = 0.1 mH | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Power Dissipation TA=25 °C | PD | | | 2 | W | TA = 25 °C, t ≤ 10 s, surface mounted | 1 |
| Maximum Power Dissipation TA=70 °C | PD | | | 1.28 | W | TA = 70 °C, t ≤ 10 s, surface mounted | 1 |
| Maximum Junction-to-Ambient N-Channel t≤10 s | RthJA | | 50 | 62.5 | °C/W | t ≤ 10 s N-Channel | 1 |
| Maximum Junction-to-Ambient P-Channel t≤10 s | RthJA | | 47 | 62.5 | °C/W | t ≤ 10 s P-Channel | 1 |
| Maximum Junction-to-Foot (Drain) Steady State N-Channel | RthJF | | 30 | 40 | °C/W | Steady State N-Channel | 1 |
| Maximum Junction-to-Foot (Drain) Steady State P-Channel | RthJF | | 29 | 38 | °C/W | Steady State P-Channel | 1 |
## CAD (KiCad official)
- Symbol: `UTM4052G-S08-R&30V-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `utm4052g-s08-r-30v-vb-etched.step` / `utm4052g-s08-r-30v-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `utm4052g-s08-r-30v-vb.step` / `utm4052g-s08-r-30v-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/utm4052g-s08-r-30v-vb-datasheet.pdf) (14 pp, sha256 `eab222f172106608`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/utm4052g-s08-r-30v-vb-datasheet.pdf)