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UTM4052G-S08-R&30V-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsutm4052g-s08-r&30v-vbfactory-2.0.0extractor-text

Verified UTM4052G-S08-R&30V-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: UTM4052G-S08-R&30V-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-3onido24/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ utm4052g-s08-r-30v-vb.kicad_sym✓ utm4052g-s08-r-30v-vb.kicad_mod✓ utm4052g-s08-r-30v-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers utm4052g-s08-r-30v-vb: viewers · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb-etched.glb Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb-etched.step utm4052g-s08-r-30v-vb: factory component page (tier=lcsc) · Ray 5d ago
utm4052g-s08-r-30v-vb-hero.glb utm4052g-s08-r-30v-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
utm4052g-s08-r-30v-vb-hero.overlay.json Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb.glb Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb.kicad_mod Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb.kicad_sym Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb.lbr Publish 0.1.0 · Ray 5d ago
utm4052g-s08-r-30v-vb.step Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 4d ago

UTM4052G-S08-R&30V-VB

VBsemi Elec · MOSFETs · SO-8

UTM4052G-S08-R&30V-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the N-channel MOSFET (channel 1), rated within the N-channel 30 V drain-source limit.
2 G1 input Gate terminal of the N-channel MOSFET (channel 1), with gate-source voltage rated at ±20 V.
3 S2 passive Source terminal of the P-channel MOSFET (channel 2), rated within the P-channel -30 V drain-source limit.
4 G2 input Gate terminal of the P-channel MOSFET (channel 2), with gate-source voltage rated at ±20 V.
5 D2 passive Drain terminal of the P-channel MOSFET (channel 2), connected internally with pin 6.
6 D2 passive Drain terminal of the P-channel MOSFET (channel 2), connected internally with pin 5.
7 D1 passive Drain terminal of the N-channel MOSFET (channel 1), connected internally with pin 8.
8 D1 passive Drain terminal of the N-channel MOSFET (channel 1), connected internally with pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage N-Channel V(BR)DSS 30 V VGS = 0 V, ID = 250 µA N-Ch 2
Drain-Source Breakdown Voltage P-Channel V(BR)DSS -30 V VGS = 0 V, ID = -250 µA P-Ch 2
Gate Threshold Voltage N-Channel VGS(th) 1 2 V VDS = VGS, ID = 250 µA N-Ch 2
Gate Threshold Voltage P-Channel VGS(th) -2 -1 V VDS = VGS, ID = -250 µA P-Ch 2
Gate-Body Leakage N-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±12 V N-Ch 2
Gate-Body Leakage P-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±12 V P-Ch 2
Zero Gate Voltage Drain Current N-Channel IDSS 1 µA VDS = 30 V, VGS = 0 V N-Ch 2
Zero Gate Voltage Drain Current P-Channel IDSS -1 µA VDS = -30 V, VGS = 0 V P-Ch 2
Zero Gate Voltage Drain Current N-Channel TJ=55 °C IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 2
Zero Gate Voltage Drain Current P-Channel TJ=55 °C IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C P-Ch 2
On-State Drain Current N-Channel ID(on) 20 A VDS = 5 V, VGS = 10 V N-Ch 2
On-State Drain Current P-Channel ID(on) -20 A VDS = -5 V, VGS = -10 V P-Ch 2
Drain-Source On-State Resistance P-Channel VGS=-10 V RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A P-Ch 2
Drain-Source On-State Resistance N-Channel VGS=8 V RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A N-Ch 2
Drain-Source On-State Resistance P-Channel VGS=-8 V RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A P-Ch 2
Drain-Source On-State Resistance N-Channel VGS=4.5 V RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A N-Ch 2
Drain-Source On-State Resistance P-Channel VGS=-4.5 V RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A P-Ch 2
Total Gate Charge N-Channel Qg 6 10 nC VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 2
Total Gate Charge P-Channel Qg 41.5 63 nC VDS = -20 V, VGS = -10 V, ID = -10 A P-Ch 2
Turn-On Delay Time N-Channel VGEN=10 V td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel 3
Turn-On Delay Time P-Channel VGEN=-10 V td(on) 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel 3
Rise Time N-Channel VGEN=10 V tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel 3
Rise Time P-Channel VGEN=-10 V tr 9 15 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel 3
Fall Time N-Channel VGEN=10 V tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Channel 3
Fall Time P-Channel VGEN=-10 V tf 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω P-Channel 3
Continuous Source-Drain Diode Current N-Channel IS 2.6 A TC = 25 °C N-Ch 3
Continuous Source-Drain Diode Current P-Channel IS -2.6 A TC = 25 °C P-Ch 3
Body Diode Voltage N-Channel VSD 0.81 1.2 V IS = 5.4 A N-Ch 3
Body Diode Voltage P-Channel VSD -1.2 -0.77 V IS = -2 A P-Ch 3
Drain-Source Voltage N-Channel VDS 30 V N-Channel 1
Drain-Source Voltage P-Channel VDS -30 V P-Channel 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current TC=25 °C N-Channel ID 8 A TC = 25 °C, TJ = 150 °C N-Channel 1
Continuous Drain Current TC=25 °C P-Channel ID -8 A TC = 25 °C, TJ = 150 °C P-Channel 1
Continuous Drain Current TC=70 °C N-Channel ID 6.8 A TC = 70 °C N-Channel 1
Continuous Drain Current TC=70 °C P-Channel ID -6.8 A TC = 70 °C P-Channel 1
Continuous Drain Current TA=25 °C N-Channel ID 6.8 A TA = 25 °C N-Channel 1
Continuous Drain Current TA=25 °C P-Channel ID -6.6 A TA = 25 °C P-Channel 1
Continuous Drain Current TA=70 °C N-Channel ID 5.4 A TA = 70 °C N-Channel 1
Continuous Drain Current TA=70 °C P-Channel ID -5.3 A TA = 70 °C P-Channel 1
Pulsed Drain Current N-Channel IDM 40 A 10 µs pulse width N-Channel 1
Pulsed Drain Current P-Channel IDM -40 A 10 µs pulse width P-Channel 1
Source-Drain Diode Current TA=25 °C N-Channel IS 1.6 A TA = 25 °C N-Channel 1
Source-Drain Diode Current TA=25 °C P-Channel IS -1.6 A TA = 25 °C P-Channel 1
Pulsed Source-Drain Current N-Channel ISM 40 A N-Channel 1
Pulsed Source-Drain Current P-Channel ISM -40 A P-Channel 1
Single Pulse Avalanche Current N-Channel IAS 10 A L = 0.1 mH N-Channel 1
Single Pulse Avalanche Current P-Channel IAS 20 A L = 0.1 mH P-Channel 1
Single Pulse Avalanche Energy EAS 520 mJ L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Power Dissipation TA=25 °C PD 2 W TA = 25 °C, t ≤ 10 s, surface mounted 1
Maximum Power Dissipation TA=70 °C PD 1.28 W TA = 70 °C, t ≤ 10 s, surface mounted 1
Maximum Junction-to-Ambient N-Channel t≤10 s RthJA 50 62.5 °C/W t ≤ 10 s N-Channel 1
Maximum Junction-to-Ambient P-Channel t≤10 s RthJA 47 62.5 °C/W t ≤ 10 s P-Channel 1
Maximum Junction-to-Foot (Drain) Steady State N-Channel RthJF 30 40 °C/W Steady State N-Channel 1
Maximum Junction-to-Foot (Drain) Steady State P-Channel RthJF 29 38 °C/W Steady State P-Channel 1

CAD (KiCad official)

  • Symbol: UTM4052G-S08-R&30V-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: utm4052g-s08-r-30v-vb-etched.step / utm4052g-s08-r-30v-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); utm4052g-s08-r-30v-vb.step / utm4052g-s08-r-30v-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 eab222f172106608, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF