# US3GB

**Shandong Jingdao Microelectronics** · Fast Recovery / High Efficiency Diodes · SMB

US3GB from Shandong Jingdao Microelectronics, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the US3GB rectifier diode, used with the repetitive peak reverse voltage VRRM of 400 V for this type (the family is rated 50 V to 1000 V). |
| 2 | Anode | passive | Anode terminal of the US3GB rectifier diode, which carries the maximum average forward rectified current IF(AV) of 3.0 A for the family. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM |  |  | 400 | V |  | 1 |
| Maximum RMS voltage | VRMS |  |  | 280 | V |  | 1 |
| Maximum DC Blocking Voltage | VDC |  |  | 400 | V |  | 1 |
| Maximum Average Forward Rectified Current | IF(AV) |  |  | 3 | A |  | 1 |
| Peak Forward Surge Current | IFSM |  |  | 90 | A | 8.3 ms Single Half Sine Wave Superimposed on Rated Load | 1 |
| Maximum Instantaneous Forward Voltage | VF |  |  | 1.3 | V | at 3 A | 1 |
| Maximum DC Reverse Current | IR |  |  | 5 | μA | Ta = 25 °C at Rated DC Blocking Voltage | 1 |
| Maximum DC Reverse Current | IR |  |  | 100 | μA | Ta = 125 °C at Rated DC Blocking Voltage | 1 |
| Operating and Storage Temperature Range | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Typical Thermal Resistance junction to ambient | RθJA |  | 45 |  | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 |
| Typical Thermal Resistance junction to case | RθJC |  | 15 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `US3GB`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `us3gb-etched.step` / `us3gb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `us3gb.step` / `us3gb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603039050043437056) (3 pp, sha256 `2ae7b42c4e442220`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/us3gb-datasheet.pdf)