component
US3GB
Public Made by Adomby adom
Shandong Jingdao Microelectronics Fast Recovery / High Efficiency Diodes, SMB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUS3GB
Shandong Jingdao Microelectronics · Fast Recovery / High Efficiency Diodes · SMB
US3GB from Shandong Jingdao Microelectronics, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the US3GB rectifier diode, used with the repetitive peak reverse voltage VRRM of 400 V for this type (the family is rated 50 V to 1000 V). |
| 2 | Anode | passive | Anode terminal of the US3GB rectifier diode, which carries the maximum average forward rectified current IF(AV) of 3.0 A for the family. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 400 | V | 1 | |||
| Maximum RMS voltage | VRMS | 280 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 400 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 3 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 90 | A | 8.3 ms Single Half Sine Wave Superimposed on Rated Load | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 1.3 | V | at 3 A | 1 | ||
| Maximum DC Reverse Current | IR | 5 | μA | Ta = 25 °C at Rated DC Blocking Voltage | 1 | ||
| Maximum DC Reverse Current | IR | 100 | μA | Ta = 125 °C at Rated DC Blocking Voltage | 1 | ||
| Operating and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Typical Thermal Resistance junction to ambient | RθJA | 45 | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 | ||
| Typical Thermal Resistance junction to case | RθJC | 15 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
US3GB - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
us3gb-etched.step/us3gb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us3gb.step/us3gb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (3 pp, sha256
2ae7b42c4e442220, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).