# UMX18NTN

**ROHM Semicon** · Bipolar (BJT) · SOT-363

UMX18NTN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Tr1 emitter; VEBO max 6V. |
| 2 | B1 | passive | Tr1 base; VEBO max 6V and VCBO max 15V. |
| 3 | C2 | passive | Tr2 collector; VCEO max 12V, VCBO max 15V, IC max 500mA (1.0A pulsed at 1ms). |
| 4 | E2 | passive | Tr2 emitter; VEBO max 6V. |
| 5 | B2 | passive | Tr2 base; VEBO max 6V and VCBO max 15V. |
| 6 | C1 | passive | Tr1 collector; VCEO max 12V, VCBO max 15V, IC max 500mA (1.0A pulsed at 1ms). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 15 |  |  | V | IC = 10μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | 12 |  |  | V | IC = 1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | 6 |  |  | V | IE = 10μA | 2 |
| Collector cut-off current | ICBO |  |  | 100 | nA | VCB = 15V | 2 |
| Emitter cut-off current | IEBO |  |  | 100 | nA | VEB = 6V | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | 90 | 250 | mV | IC = 200mA, IB = 10mA | 2 |
| DC current gain | hFE | 270 |  | 680 | - | VCE = 2V, IC = 10mA | 2 |
| Collector current | IC |  |  | 500 | mA |  | 2 |
| Collector current (pulsed) | ICP |  |  | 1 | A | Pw=1ms Single Pulse | 2 |
| Collector-base voltage | VCBO |  |  | 15 | V |  | 2 |
| Collector-emitter voltage | VCEO |  |  | 12 | V |  | 2 |
| Emitter-base voltage | VEBO |  |  | 6 | V |  | 2 |
| Power dissipation (UMX18N) | PD |  |  | 150 | mW | Each terminal mounted on a reference land; 120mW per element must not be exceeded | 2 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 2 |
| Range of storage temperature | Tstg | -55 |  | 150 | ℃ |  | 2 |

## CAD (KiCad official)

- Symbol: `UMX18NTN`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `umx18ntn-etched.step` / `umx18ntn-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `umx18ntn.step` / `umx18ntn.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589941036958187520) (10 pp, sha256 `500b0105848828a2`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/umx18ntn-datasheet.pdf)