component
UMX18NTN
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUMX18NTN
ROHM Semicon · Bipolar (BJT) · SOT-363
UMX18NTN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Tr1 emitter; VEBO max 6V. |
| 2 | B1 | passive | Tr1 base; VEBO max 6V and VCBO max 15V. |
| 3 | C2 | passive | Tr2 collector; VCEO max 12V, VCBO max 15V, IC max 500mA (1.0A pulsed at 1ms). |
| 4 | E2 | passive | Tr2 emitter; VEBO max 6V. |
| 5 | B2 | passive | Tr2 base; VEBO max 6V and VCBO max 15V. |
| 6 | C1 | passive | Tr1 collector; VCEO max 12V, VCBO max 15V, IC max 500mA (1.0A pulsed at 1ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 15 | V | IC = 10μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 12 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 6 | V | IE = 10μA | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB = 15V | 2 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB = 6V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 90 | 250 | mV | IC = 200mA, IB = 10mA | 2 | |
| DC current gain | hFE | 270 | 680 | - | VCE = 2V, IC = 10mA | 2 | |
| Collector current | IC | 500 | mA | 2 | |||
| Collector current (pulsed) | ICP | 1 | A | Pw=1ms Single Pulse | 2 | ||
| Collector-base voltage | VCBO | 15 | V | 2 | |||
| Collector-emitter voltage | VCEO | 12 | V | 2 | |||
| Emitter-base voltage | VEBO | 6 | V | 2 | |||
| Power dissipation (UMX18N) | PD | 150 | mW | Each terminal mounted on a reference land; 120mW per element must not be exceeded | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
UMX18NTN - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
umx18ntn-etched.step/umx18ntn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);umx18ntn.step/umx18ntn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (10 pp, sha256
500b0105848828a2, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).